Tokyo Electron Limited

Disco Corporation

Mitsubishi Heavy Industries Limited

Nec Corporation

Mitsubishi Heavy Industries Mechatronics Systems, Ltd.

New York University

Atsushi Kubo

Taro Ikeda

Yoshiaki Yodo

Naoko Yamamoto

Ayuta Suzuki

Yoshimasa Kojima

Minoru Kawabata

Gordon M Keller

Hans Joerg Fehling

Valerie Kouskoff

Tsuyoshi Moriya

Satoru Kawakami

Eiki Kamata

Tsuyoshi Takahashi

Munehito Kagaya

Hidefumi Matsui

Kazuyoshi Matsuzaki

Xin Lu

Nobuhiko Yamamoto

Tadaaki Monzen

Tadashi Mitsunari

Yusuke Yamashina

Hideaki Harada

Kosuke Yamamoto

Keisuke Sasajima

A substrate processing method for performing a predetermined process on a substrate includes performing, a plurality of times, a cycle including (a) supplying a first processing gas into a processing container to which an exhaust pipe is connected and which accommodates the substrate and (b) supplying a second processing gas into the processing container, wherein at least one of (a) and (b) includes (c) introducing a ballast gas into the exhaust pipe and forming plasma of the processing gas supplied into the processing container.

Substrate processing method and substrate processing apparatus

A substrate processing system, which includes a transfer device configured to simultaneously transfer a plurality of substrates and suitably corrects positions of the substrate, and a method of controlling the substrate processing system are provided. The substrate processing system includes: a process chamber in which a plurality of substrates is processed; a vacuum transfer chamber connected to the process chamber; a transfer device provided in the vacuum transfer chamber and configured to simultaneously transfer a plurality of substrates; a module connected to the vacuum transfer chamber and having a plurality of stages on which substrates are placed; and a controller. The controller is configured to measure an amount of change of an arm of the transfer device that has transferred processed substrates, and to correct positions of the stages based on the amount of change of the arm of the transfer device.

Substrate processing system and method for controlling substrate processing system

A measurement system including an imaging device and a plasma processing device having a plasma generator configured to generate plasma from a gas supplied into a processing chamber and a controller. The imaging device is configured to generate optical information of the plasma from image data of imaged plasma in the processing chamber, and the controller is configured to convert the generated optical information of the plasma into a plasma parameter that determines physical characteristics of the plasma with reference to a storage that stores correlation information between the optical information of the plasma and measurement results of the plasma parameter.

Measurement system, measurement method, and plasma processing device

A method of processing a workpiece includes holding a face side of the workpiece on a holding table having a region made of a transparent material and forming a processed groove in the workpiece with a cutting blade. The forming a processed groove includes capturing an image of the processed groove on a reverse side and the face side of the workpiece, and detecting whether a position of a first central line of the processed groove on the reverse side and a position of a second central line of the processed groove on the face side are in conformity in a predetermined plane. If the positions of the first and second central lines are not in conformity, then the forming a processed groove further has correcting a position of the center of the cutting blade in order to bring the positions of the first and second central lines into conformity.

Method of processing workpiece

A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

Plasma processing apparatus

A shower plate includes a plate-shaped dielectric main body having gas holes, and a plurality of sealed areas formed in the dielectric main body. Each of the sealed areas has a permittivity lower than a permittivity of the dielectric main body. A volume density of the sealed areas at a central region of the dielectric main body is higher than a volume density of the sealed areas at a peripheral region of the dielectric main body.

Shower plate, lower dielectric member and plasma processing apparatus

A thermocompression bonding method for thermocompression bonding a sheet to a workpiece, where the method includes a stacking step of placing the sheet between a flat plate and the workpiece to form a stack in which the sheet is held between the workpiece and an entire surface of the flat plate and a thermocompression bonding step of thermocompression bonding the sheet to the workpiece while planarizing the sheet with the flat plate by heating the sheet and applying an external force to the stack, after performing the stacking step.

Thermocompression bonding method for workpiece

A processing apparatus includes a chuck table including a plate-shaped holding component having a predetermined region transparent from one surface to the other surface, a processing unit that processes a workpiece, a first imaging unit disposed over the chuck table to acquire a normal image of the back surface side, and a second imaging unit disposed under the chuck table to acquire a normal image of the front surface side, a display device, and a control part that executes image processing of the normal image of either the back or front surface side to cause the normal image subjected to the image processing to be displayed on the display device in the state of being inverted in a predetermined direction in order to allow the orientation of the normal image of the back surface side to correspond with the orientation of the normal image of the front surface side.

Processing apparatus

A processing method for a workpiece, which includes a stacking step of stacking a sheet and a flat plate on a front side of the workpiece to form a stack, a thermocompression bonding step of thermocompression bonding the sheet to the workpiece while planarizing the sheet with the flat plate by heating the sheet and applying an external force to the stack, a holding step of holding the workpiece via the sheet by a holding table having a transparent portion, an alignment step of performing an alignment by imaging the workpiece through the transparent portion and the sheet, and a processing step of processing the workpiece by a processing unit.

Processing method and thermocompression bonding method for workpiece

A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.

Film forming apparatus and film forming method

A wafer has a plurality of projected dicing lines on a face side thereof, a plurality of devices formed in respective areas demarcated on the face side of the wafer by the projected dicing lines, a plurality of grooves defined in the projected dicing lines, and a molding resin laid on the devices and embedded in the grooves. An outer circumferential portion of the molding resin is removed, exposing the molding resin embedded in the grooves. The molding resin embedded in the grooves exposed on an outer circumferential portion of the wafer is detected, and a laser beam is focused at a transversely central point on the molding resin embedded in the grooves. The laser beam is applied to the molding resin along the grooves, thereby forming dividing grooves in the wafer to allow the wafer to be divided into individual devices.

Method of processing wafer

A vibration control device that can achieve the best vibration control effect within an allowable stroke range of a movable mass includes a controller that calculates at least one of a displacement deviation between a target displacement of a movable mass and a displacement of the movable mass detected by a mass displacement sensor and a velocity deviation between a target velocity of the movable mass and a velocity of the movable mass detected by a mass velocity sensor, and generates a control command for making a motor drive the movable mass on the basis of at least one of the displacement deviation and the velocity deviation. The target displacement and the target velocity are set in a manner that the amplitude of the movable mass becomes constant and that phases thereof are delayed 90 degrees with respect to the vibration of a building.

Vibration control device

It is intended to provide a vibration control apparatus that can be installed in a small pace and can be produced at low cost, as well as a wind turbine generator equipped with the vibration control apparatus and a vibration control method. The vibration control apparatusincludes a first vibration systemof inverted-pendulum type, second vibration systemsof inverted-pendulum type which are provided on both sides of the first vibration system, a restraining unitwhich restrains a first weightof the first vibration systemand a second weightof the second vibration systemand a damper which damps vibration of the first weightand the second weight. The vibration control apparatusis installed on an upper floorof a plurality of floors

Vibration control apparatus, wind turbine generator and vibration control method

A vibration control apparatus of a wind turbine generator that can be installed in a small space inside a tower, without a weight increase of the tower, and that can change the natural frequency thereof is provided. Included is a swinging rod extending in the vertical direction and suspended from beams provided on an upper part of the tower via a first universal joint; a flange part extending outward from the upper end outer surface of the swinging rod in the radial direction along the circumferential direction; a pendulum including a bob attached to the swinging rod and capable of moving up and down in the vertical direction; and a plurality of attenuation devices each of whose upper end is attached to the beams with a second universal joint and whose lower end is attached to the flange part with a third universal joint.

Vibration control apparatus of wind turbine generator and wind turbine generator

Each of a plurality of host devices sharing one disk device with each other includes a disk cache. When one of the host devices writes data in a cache included therein, it sends information that the data has been written in the cache, to the shared disk device and the other host devices. The shared disk device retains the sent information, while each of the other host devices erases the data of a corresponding block from its cache. When the other host device reads the data of the block, there is a cache miss, so that the other host device requests the shared disk device to transmit the data of the block. The shared-disk device transmits the block into the cache of the host device having requested the transmission of the block, based on information retained in an internal register of the shared-disk device.

Growing community of inventors

Tokyo, Japan

Atsushi Kubo