Denso Corporation

Atsushi Komura

Tetsuo Fujii

Muneo Tamura

Takeshi Kuzuhara

Masahiko Ishii

Kazuhiko Sugiura

Makoto Asai

Nozomu Akagi

Mitsutaka Katada

Yasutomi Asai

Yasuhiro Kitamura

Noriyuki Iwamori

Hirofumi Funahashi

Hisato Kato

Kenji Kohno

Yumi Maruyama

Manabu Koike

Takayoshi Naruse

Hirotsugu Funato

Hiroshi Otsuki

Kenji Nakashima

Jiro Sakata

A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.

Semiconductor device including double-sided multi-electrode chip embedded in multilayer wiring substrate

A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.

Dicing method for semiconductor substrate

A device separated from a wafer includes: a chip having a sidewall, which is provided by a dicing surface of the wafer in a case where the device is separated from the wafer; and a protection member disposed on the sidewall of the chip for protecting the chip from being contaminated by a dust from the dicing surface. In the device, the dicing surface of the wafer is covered with the protection member so that the chip is prevented from contaminated with the dust.

Method for dicing semiconductor substrate

A semiconductor device includes a substrate, an element formed in the substrate, an insulation film formed on the substrate, wiring layers, and an electrode pad. The wiring layers are multilayered and electrically coupled to the element through the insulation film. The electrode pad is electrically coupled to a top wiring layer of the wiring layers. The top wiring layer is configured to be a top wiring-electrode layer that doubles as an electrode layer disposed under the electrode pad. The electrode layer of the top wiring-electrode layer is disposed directly above the element. The electrode pad and the electrode layer are multilayered to form a pad structure.

Semiconductor device, wiring of semiconductor device, and method of forming wiring

In a process of manufacturing a semiconductor device, after a gate oxide film is formed, the thickness of the gate oxide film is measured by measuring an exposure period defined from a time at which the oxide film is formed to a time at which the thickness of the oxide film is measured. In addition, if necessary, the measurement of the oxide film is corrected to determine the real thickness based on the exposure period. Accordingly, the thickness of the gate oxide film can be measured accurately.

Method for measuring thickness of oxide film

In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950&deg; C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.

Method of manufacturing semiconductor device

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Kariya, Japan

Atsushi Komura