Toyo Tire Rubber Co., Ltd.

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Atsushi Kazuno

Kazuyuki Ogawa

Tetsuo Shimomura

Masahiko Nakamori

Takatoshi Yamada

Tsuyoshi Kimura

Yoshiyuki Nakai

Koichi A Ono

Masahiro Watanabe

Hiroshi Seyanagi

Shigeru Komai

Takashi Masui

Takeshi Fukuda

Masato Doura

Masanobu Banno

Toshiya Tsujimoto

Takanori Sugie

Shinji Shimizu

Masashi Moriyama

Katsuya Sato

Kikuo Sekita

Hirokazu Masui

A polishing pad capable of maintaining a high level of dimensional stability during absorption of moisture or water includes a polishing layer including a polyurethane foam having fine cells, wherein the polyurethane foam includes a cured product of a reaction of an isocyanate-terminated prepolymer (a), a polymerized diisocyanate, and a chain extender, and the isocyanate-terminated prepolymer (a) includes an isocyanate monomer, a high molecular weight polyol (a), and a low molecular weight polyol. A method for manufacturing such a polishing pad includes mixing a first component containing an isocyanate-terminated prepolymer with a second component containing a chain extender and curing the mixture to form a polyurethane foam. The pad so made is used in the manufacture of semiconductor devices.

Polishing pad

An object of the present invention is to provide a polishing pad having high planarization property and capable of making it possible to suppress the occurrence of scratches. A polishing pad of the present invention has a polishing layer having oval cells each with a long axis inclined by 5&#xb0; to 45&#xb0; with respect to the direction of the thickness of the polishing layer.

The purpose of the present invention is to provide a laminated polishing pad that can be flatly bonded to a polishing platen even if it is large in size. This laminated polishing pad, comprising a polishing layer and a support layer with an adhesive member interposed therebetween, wherein the polishing layer contains 0.5 to 5% by weight of a hydrophilic substance; the support layer is a layer obtained by integrally molding a cushion layer and a resin film having a thermal dimensional change rate of 1.3 to 12.6%; the laminated polishing pad has a concavely warped form in the polishing layer side; and the laminated polishing pad has an average warp amount of 3 to 50 mm at the peripheral edge of the pad.

An object of the present invention is to provide a polishing pad that is prevented from causing an end-point detection error due to a reduction in light transmittance from the early stage to the final stage of the process, and to provide a method of producing a semiconductor device with the polishing pad. The present invention is directed to a polishing pad, comprising a polishing layer comprising a polishing region and a light-transmitting region, wherein a polishing side surface of the light-transmitting region is subjected to a surface roughness treatment, and the light-transmitting region has a light transmittance of 40% to 60% at a wavelength of 600 nm before use.

A polishing pad capable of maintaining a high level of dimensional stability during absorption of moisture or water includes a polishing layer including a polyurethane foam having fine cells, wherein the polyurethane foam includes a cured product of a reaction of an isocyanate-terminated prepolymer (A), a polymerized diisocyanate, and a chain extender, and the isocyanate-terminated prepolymer (A) includes an isocyanate monomer, a high molecular weight polyol (a), and a low molecular weight polyol. A method for manufacturing such a polishing pad includes mixing a first component containing an isocyanate-terminated prepolymer with a second component containing a chain extender and curing the mixture to form a polyurethane foam. The pad so made is used in the manufacture of semiconductor devices.

An object of the invention is to provide a polishing pad which has a polishing layer with a phase-separated structure and can provide high polishing rate and high planarization property and with which scratching can be suppressed. The polishing pad comprises the polishing layer. The polishing layer comprises a product of curing reaction of a polyurethane-forming raw material composition containing: (A) an isocyanate-terminated prepolymer obtained by reaction of a prepolymer-forming raw material composition (a) containing an isocyanate component and a polyester-based polyol; (B) an isocyanate-terminated prepolymer obtained by reaction of a prepolymer-forming raw material composition (b) containing an isocyanate component and a polyether-based polyol; and a chain extender, wherein the product of curing reaction has a phase-separated structure.

A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.

Polishing pad and method of producing semiconductor device

A polishing pad generates very few scratches on a surface of a polishing object, and is excellent in planarization property. The polishing pad has a high polishing rate and is excellent in planarization property. The polishing pad grooves become very little clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, the polishing rate is scarcely reduced.

The invention provides a polishing pad by which optical materials such as lenses, reflecting mirrors etc., or materials requiring a high degree of surface planarity, as in the polishing of silicone wafers, glass substrates or aluminum substrates for hard disks, or general metal polishing, can be flattened with stability and high polishing efficiency. The invention also provides a polishing pad for semiconductor wafers, which is superior in planarizing characteristic, is free from scratches and can be produced at low cost. There is provided a polishing pad which is free from dechucking error so that neither damage to wafers nor decrease in operating efficiency occurs. There is provided a polishing pad which is satisfactory in planarity, within wafer uniformity, and polishing rate and produces less change in polishing rate. There is provided a polishing pad which can make planarity improvement and scratch decrease compatible.

Polishing pad and method of producing the same

A polishing pad having excellent planarization performance and wear resistance includes a polishing layer including a polyurethane foam having fine cells. The polyurethane foam is a cured product of a reaction of (1) an isocyanate-terminated prepolymer (A) that is capable of reacting with 4,4'-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan &#x3b4; peak temperature of 100&#xb0; C. or more, (2) an isocyanate-terminated prepolymer (B) that is capable of reacting with 4,4&#x2032;-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan &#x3b4; peak temperature of 40&#xb0; C. or less, and (3) 4,4&#x2032;-methylenebis(o-chloroaniline), and the isocyanate-terminated prepolymers (A) and (B) are mixed in an (A)/(B) ratio of 50/50 to 90/10 (by wt%). The pad so made is used in the manufacture of semiconductor devices.

A method for manufacturing a polishing pad made from a polyurethane resin foam having very uniform, fine cells therein and a polishing pad obtained by that method provides a polishing pad having better polishing characteristics (especially, in planarization) while providing improved dressability while maintaining the planarization characteristics and polishing speed of a conventional polishing pad. The polyurethane resin foam is a cured product obtained by reacting an isocyanate-terminated prepolymer with an aromatic polyamine chain extender having a melting point of 70&#xb0; C. or lower, for example.

Polishing pad and manufacturing method thereof

It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).

The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference &#x394;T (&#x394;T=T&#x2212;T) (%) between Tand Tis within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein Tis the light transmittance (%) of the light-transmitting region measured at the measurement wavelength &#x3bb; after dipping for 24 hours in a KOH aqueous solution at pH 11 or an HOaqueous solution at pH 4 and Tis the light-transmittance (%) measured at the measurement wavelength &#x3bb; before the dipping.

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Osaka, Japan

Atsushi Kazuno