Sony Corporation

Sony Group Corporation

Atsushi Kawashima

Yasufumi Miyoshi

Katsunori Hiramatsu

Shingo Kadomura

Takaaki Miyamoto

A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

Solid-state imaging device and method of manufacturing the same, and imaging apparatus

A plasma CVD process of forming a metal film containing a residual halogen element in a small amount and a high reliability semiconductor device fabricated by the process. The plasma CVD process includes the step of forming a metal film on a substrate to be processed, using a mixed gas containing a metal halide and hydrogen, wherein the plasma CVD process adopts a plasma CVD condition which is determined in such a manner that emission spectrum intensities of a plasma of the mixed gas are measured; and a mixing ratio of the metal halide in the mixed gas is set to be not more than a value at which a decreasing rate, depending on mixing of the metal halide, of an emission spectrum intensity of a hydrogen spectral line is rapidly changed and also at which an increasing ratio, depending on mixing of the metal halide, of an emission spectrum intensity of a halogen element is rapidly changed.

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Kumamoto, Japan

Atsushi Kawashima