Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Atsushi Kamino

Hisayuki Takasu

Toru Iwaya

Hitoshi Kamoshida

Hirobumi Muto

Asako Kaneko

Shota Aida

Kento Horinouchi

Mami Konomi

Shunya Watanabe

Megumi Nakamura

Sakae Koubori

There is provided an ion milling apparatus that can enhance reproducibility of ion distribution. The ion milling apparatus includes an ion source, a sample stageon which a sample processed by radiating a non-convergent ion beam from the ion sourceis placed, a drive unitthat moves a measurement member holding sectionholding an ion beam current measurement memberalong a track located between the ion source and the sample stage, and an electrodethat is disposed near the track, in which a predetermined positive voltage is applied to the electrode, the ion beam current measurement memberis moved within a radiation range of the ion beam by the drive unit, in a state in which the ion beam is output from the ion sourceunder a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement memberis measured.

Ion milling device

Provided is an ion milling apparatus capable of enhancing reproducibility of an ion distribution. The ion milling apparatus includes: an ion source; a sample stageon which a sample to be processed by being irradiated with an unfocused ion beam from the ion sourceis placed; and a measurement member holding unitthat holds an ion beam current measurement member. A covering materialis provided so as to cover at least a surface of the measurement member holding unitand the sample stagefacing the ion source. A material of the covering materialcontains, as a main component, an element having an atomic number smaller than that of an element of a material of a structure on which the covering material is provided. The ion beam current measurement memberis moved in an irradiation range of the ion beam on a trajectory, which is located between the ion source and the sample stage, in a state where the ion beam is output from the ion sourceunder a first irradiation condition, and an ion beam current flowing when the ion beam current measurement memberis irradiated with the ion beam is measured.

The invention provides an ion milling device capable of cross-sectional milling on an all-solid-state battery while reducing an occurrence of a short circuit due to a redeposition film. The ion milling device includes a sample stageon which a sampleis placed, an ion sourceconfigured to emit an unfocused ion beamtoward the sample, a stage controllerconfigured to cause the sample stage to perform a swing operation centered on a swing axis Sset to be orthogonal to an ion beam center Bof the ion beam, and cause the sample stage to perform a sliding operation along a line of intersection between a plane (YZ plane) including the ion beam center and perpendicularly intersecting the swing axis and a sample placement surface of the sample stage, in which the stage controller causes, in a first mode operation, the sample stage to perform the swing operation and the ion source to emit the ion beam to mill the sample, and causes in a second mode operation, the sample stage to perform the sliding operation and the ion source to emit the ion beam to remove sputter particles adhered again to the sample in the first mode operation.

Ion milling device and milling processing method using same

Provided is an ion milling device capable of improving the reproducibility of an ion distribution. An ion milling device includes: an ion source (); a sample stage () on which a sample () to be processed by being irradiated with an unfocused ion beam from the ion source () is placed; and a drive unit () configured to be arranged between the ion source () and the sample stage (), and to move a linear ion beam measuring member () extending in a first direction to a second direction orthogonal to the first direction, in which the drive unit () moves the ion beam measuring member () within an emission range of the ion beam in a state where the ion beam is outputted from the ion source () under a first emission condition, and an ion beam current flowing through the ion beam measuring member () is measured by irradiating the ion beam measuring member () with the ion beam.

By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.

Ion milling device and ion source adjusting method for ion milling device

The present invention is directed to a side entry type sample holder which enables observation with an observation apparatus without removing the sample to be analyzed from the sample holder after processing the sample to be analyzed by a processing apparatus. The sample holder includes a grip, a sample holder main body extending from the grip, a tip portion which is connected to the sample holder main body and provided with a sample table for fixing a sample, and a mechanism which changes a relative positional relationship between a processing surface of the sample fixed to the sample table and an irradiation direction of an ion beam, and causes the tip portion to avoid irradiation with the ion beam during sample processing.

Sample holder, ion milling apparatus, sample processing method, sample observing method, and sample processing and observing method

An ion milling device of the present invention is provided with a tilt stage () which is disposed in a vacuum chamber () and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism () which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

This ion milling device is provided with a vacuum chamber (), an exhaust device () for evacuating the interior of the vacuum chamber, a sample stage () for supporting a sample () to be irradiated inside the vacuum chamber, a heater () for heating the interior of the vacuum chamber, a gas source () for introducing into the vacuum chamber a gas serving as a heating medium, and a controller () for controlling the gas source, the controller controlling the gas source so that the vacuum chamber internal pressure is in a predetermined state during heating by the heater. This enables the control in a short time of the temperature for suppressing condensation, or the like, occurring at atmospheric release after cooling and ion milling a sample.

Ion milling device and processing method using the ion milling device

The present invention relates to adjustment of a mask position by driving an R-axis of an electron microscope in order to adjust the mask position with high accuracy while performing observation by the electron microscope without providing a heat generation source inside the electron microscope. The R-axis originally exists in a sample chamber of the electron microscope, which enables control with high accuracy. The R-axis driving of a sample stage can be substituted by raster rotation, therefore, the mask position can be adjusted with high accuracy while performing observation by the electron microscope according to the present invention.

Mask position adjustment method of ion milling, electron microscope capable of adjusting mask position, mask adjustment device mounted on sample stage and sample mask component of ion milling device

Provided is a technology for suppressing a heat rise in a sample, the heat rise being generated due to ion beam irradiation at a low acceleration voltage. A blocking plate, which is different from a mask, is disposed in front of a sample. The blocking plate has an opening that overlaps a processing surface, and ion beams pass only through the opening of the blocking plate, and in the areas excluding the opening, the ion beams are blocked by the blocking plate, and the sample is not irradiated thereby. Furthermore, the heat rise in the sample is further suppressed by cooling the blocking plate.

Ion milling apparatus and sample processing method

The present invention advantageously provides an ion milling device that can set a high-precision processing area with a simple structure. The ion milling device includes a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam. The sample holder includes a first contact surface that contacts an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.

The sampleis tilted/oscillated with respect to the optical axis (Z-axis) of the ion beamto repeat tilt and tilt/restoration of a processing target surfaceof the samplebetween a surface state in which the processing target surfaceof the samplefaces a tilt axis direction (Y-axis direction) and a tilted surface state in which a portion of the processing target surfaceon the sample stage side protrudes in the tilt axis direction (Y-axis direction) than does a portion of the processing target surfaceon the mask side, so that the processing target surfaceis irradiated with the ion beamat a low angle, and projections/recessesderived from a voidor a dissimilar materialare suppressed. Accordingly, it is possible to suppress generation of projections/recesses derived from a void or dissimilar material in fabrication of a cross section sample, and thus fabricate a sample cross section suitable for observation/analysis.

Ion milling device and ion milling processing method

Disclosed is a shield () disposed between an ion source () of an ion milling device and a sample () so as to be in contact with the sample. The shield is characterized by having a circular shape having an opening at the center, and by being capable of rotating about an axis () extending through the opening. Further, a groove is provided in the ion source-side surface of an end portion of the shield, and an inclined surface is provided on an end portion of the shield. Thus, an ion milling device having a shield, wherein the maximum number of machining operations can be increased, and the position of the shield can be accurately adjusted.

Growing community of inventors

Tokyo, Japan

Atsushi Kamino