Hitachi, Ltd.

Other

Hitachi-High-Technologies Corporation

Hitachi High-Tech Corporation

Atsushi Itou

Kouji Nishihata

Shigekazu Kato

Tsunehiko Tsubone

Naoyuki Tamura

Kenji Nakata

Tsuenhiko Tsubone

Masaru Izawa

Naoshi Itabashi

Tsutomu Tetsuka

Yoshifumi Ogawa

Koichi Yamamoto

Kouichi Yamamoto

Satoshi Nakamichi

Gaku Saitou

A plasma processing apparatus includes: a high voltage power supply for supplying a high voltage power to a magnetron; and a detector for detecting a microwave output from the magnetron, wherein based on a result of comparing a signal, which is obtained by adding an output from the detector to an AC component of a current detected from an output of the high voltage power supply, with a setting value of the output of the high voltage power supply, the output of the high voltage power supply is adjusted.

Plasma processing apparatus and microwave output device

Display screen with graphical user interface

In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.

Plasma processing apparatus and plasma processing method

The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber, a plasma generating high frequency power supplyand a measurement device unitfor estimating the status of the apparatus via reflected wavesof the incident wavesreflected from the processing apparatus including a waveform generator, a VCO, a directional coupler, a detectorand a measurement data processing unit, frequency-swept high frequency wavesfor measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected wavesto thereby monitor the change in status of the processing apparatus.

Plasma processing apparatus and method for detecting status of said apparatus

This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

Vacuum processing apparatus and operating method therefor

This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chamber are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

Vacuum processing apparatus and operating method with wafers, substrates and/or semiconductors

This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dirty-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

Vacuum processing operating method with wafers, substrates and/or semiconductors

This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used to dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

A vacuum processing apparatus which includes a means for transferring substrates from a loader, with a transferring device, to a double lock chamber; and, then to a selected vacuum processing chamber. The substrates are returned to a substrate, by the vacuum loader, into their original position in the substrate table. The surfaces of the substrates are maintained in a horizontal position during processing.

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Kudamatsu, Japan

Atsushi Itou