Hitachi, Ltd.

Hitachi Media Electronics Co., Ltd.

Other

Renesas Electronics Corporation

Hitachi Denshi Kabushiki Kaisha

Atsushi Isobe

Kengo Asai

Hisanori Matsumoto

Noriyuki Sakuma

Yuudai Kamada

Chisaki Takubo

Mitsutaka Hikita

Nobuhiko Shibagaki

Takashi Shiota

Tomonori Sekiguchi

Satoshi Tanaka

Takashi Oshima

Hiroshi Okabe

Eriko Takeda

Toyoji Tabuchi

Yuki Furubayashi

Kazuhito Kurosawa

Ryo Suzuki

Hiroyuki Uchiyama

Keiji Watanabe

Daisuke Maeda

Tatsuyuki Saito

Tatsuo Nakagawa

Atsushi Sumioka

Kazuyuki Sakiyama

Tatemi Ido

Masaharu Kinoshita

Kazuo Ono

Ryo Imura

Kunio Matsumoto

Akihisa Terano

Misuzu Sagawa

Shinichi Fujiwara

Tsuyoshi Kachi

Kohji Oda

Yoshinori Hoshina

Naoki Isobe

Masahiko Isobe

Provided are acceleration sensor, geophone and seismic prospecting system with high sensitivity and low power consumption. The acceleration sensor includes a mass body displaceable with respect to a rotation shaft. The acceleration sensor includes a first AC servo control facing a first symmetrical region of the first movable portion, a second AC servo control electrode facing a second symmetrical region of the second movable portion, and a DC servo control electrode facing an asymmetrical region of the second movable portion. A first AC servo capacitive element is formed by the first movable portion and the first AC servo control electrode, a second AC servo capacitive element is formed by the second movable portion and the second AC servo control electrode, and a DC servo capacitive element is formed by the second movable portion and the DC servo control electrode.

Acceleration sensor, geophone, and seismic prospecting system

Provided is an acceleration sensor having a large mass in a movable portion, and realizing high impact resistance. An acceleration sensor elementincludes an upper substrate, a lower substratespaced apart from the upper substrate, and an intermediate substrateprovided between the upper substrateand the lower substrate. Each of a first movable portion, a second movable portion, a frame portion, a fixed portion, and a spring portionconstituting the intermediate substrateis configured with two layers of an upper layer and a lower layer, and a stopper portionis provided at one end of the frame portion. A distancebetween an end portion of the first movable portionor the second movable portionand an end portion of the stopper portionin the upper layer and a distancebetween an end portion of the first movable portionor the second movable portionand an end portion of the stopper portionin the lower layer are different from each other.

Acceleration sensor

An acceleration sensor has high sensitivity, low power consumption and high linearity of output to the applied acceleration under gravity. To solve the above problem, the acceleration sensor is provided with a movable section placed between a base substrate and a cap substrate and rotating about a rotation axis. A top left electrode included in the cap substrate and a left movable electrode included in the movable section form a left capacitor, and a top right electrode included in the cap substrate and a right movable electrode included in the movable section form a right capacitor. Then, a lateral width of a first detection region in which capacitance is detected between the top left electrode and the left movable electrode, and a lateral width of a second detection region in which capacitance is detected between the top right electrode and the right movable electrode are different from each other.

In an acceleration sensor detecting a vibration acceleration by using torsion of a beam joining a fixed portion and a membrane, a spring constant of the beam is decreased while an increase in a chip size due to extension of the beam is prevented, so that an acceleration sensor that is highly sensitive and small in a size is provided with a low price. A sensor of a capacitance detecting type includes a membrane having a stacking structure formed of two or more layers and a plurality of beams capable of twisting so that the membrane is movable in a detecting direction, a first beam of the plurality of beams is formed of the same layer as either an upper or a lower layer of the membrane, and a second beam thereof is formed of the same layer as either an upper or a lower layer of the movable portion.

There is provided an acceleration sensor with low noise and high sensitivity. Specifically, a first number of opening portions are formed in a region corresponding to a heavyweight section of a mass body, on a surface of a membrane layer, and a second number of opening portions are formed in a region corresponding to the heavyweight section of the mass body, on a back surface of the membrane layer. The opening portion and the opening portion are connected to each other to form a plurality of through portions on the membrane layer, and the first number is larger than the second number.

An acceleration sensor with an improved membrane (mass body) is provided. The membrane includes a moving portion, a moving portion electrically separated from the moving portion, and a mechanical junction portion that mechanically connects the moving portion and the moving portion in a y-axis direction. The mechanical junction portion includes a first portion extending in a direction having a first angle with respect to the y-axis direction and a second portion extending in a direction having a second angle different from the first angle with respect to the y-axis direction in an xy plane, and is formed to have a non-linear shape in an x-axis direction. The acceleration sensor with improved the membrane stably operates by reducing a variation in a capacity value of a detection electrode and has an excellent noise characteristic.

Acceleration sensor including improved mass body

In a calculator in a MEMS manufacturing system, a stage control unit inclines a stage based on a stage anglesetting a stage inclination angle and a stage angleof the inclination angle different from the stage angle. A stage-angle calculation unit calculates the stage inclination angles from first and second images acquired by a SEM apparatus when the stage control unit sets the stage at the stage anglesand. A 3D-data creation unit creates three-dimensional device data from a third image that is a device image acquired when the stage is set at the stage angleand a fourth image that is a device image acquired when the stage is set at the stage angle. When the three-dimensional device data is created, a correction value calculated from the stage anglesandand the first and second images is used.

MEMS manufacturing system and MEMS manufacturing method

An acceleration sensor () includes a fixed portion (), a movable portion () connected to the fixed portion (), a lower electrode () that is disposed to face a lower surface of the movable portion (), and an upper electrode () that is disposed to face an upper surface of the movable portion (). A distance in an x-axis direction between an end portion () of the lower electrode () and the fixed portion () is shorter than a distance in the x-axis direction between an end portion () of the upper electrode () and the fixed portion (). Further, a distance in the x-axis direction between an end portion () of the lower electrode () and the fixed portion () is shorter than a distance in the x-axis direction between an end portion () of the upper electrode () and the fixed portion ().

There is provided an inertia sensor with low noise and high sensitivity. The inertia sensor captures a physical quantity as a change of electrostatic capacitance and detects the physical quantity based on a servo voltage generating electrostatic force that cancels the change of the electrostatic capacitance. The inertia sensor includes a detection capacitor unit that captures the physical quantity as the change of the electrostatic capacitance and a servo capacitor unit to which the servo voltage is applied. Here, the detection capacitor unit and the servo capacitor unit are connected mechanically through an insulation material.

Inertia sensor with improved detection sensitivity using servo voltage to detect a physical quantity

Airtightness in a cavity of an inertial sensor (acceleration sensor) is increased to achieve high sensitivity. In the acceleration sensor having movable electrodes VE, VEand fixed electrodes FE, FE, the fixed electrodes are formed by portions surrounded by a through hole THprovided in a cap layer CL, and the through hole is filled with an insulating film IFand polysilicon P and has a wide portion (WP). The wide portion has a gap SP that is not filled with the insulating film IFand the polysilicon P, and the gap SP is filled with the interlayer insulating film ID. With such a configuration, degassing can be exhausted through the gap (airway) SP in a pressure reducing step.

Inertia sensor and method of manufacturing the same

A manufacturing method of a MEMS sensor includes a step of, by irradiating a first hole formed in a second layer on a semiconductor substrate with a focused ion beam for a first predetermined time, forming a first sealing film, which seals the first hole, on the first hole, and a step of, by irradiating a second hole formed in the second layer with a focused ion beam for a second predetermined time, forming a second sealing film, which seals the second hole, on the second hole. At this time, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.

Manufacturing method of MEMS sensor

A low-noise and high-sensitivity inertial sensor is provided. On the assumption that a movable portion VUand a movable portion VUare formed in the same SOI layer, the movable portion VUand the movable portion VUare mechanically connected to each other by a mechanical coupling portion MCU even while these movable portions are electrically isolated from each other. Thereby, according to a sensor element SE in the invention, it is possible to further suppress a shift between the capacitance of a MEMS capacitorand the capacitance of a MEMS capacitor

Inertial sensor

A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrateS including an area ARon which an LDMOSFET is formed and an area ARon which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrateS.

Semiconductor device, manufacturing method of the same, and mobile phone

A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

Growing community of inventors

Kodaira, Japan

Atsushi Isobe