Kabushiki Kaisha Toshiba

Atsushi Ishimaru

Masami Nagaoka

Keita Masuda

A semiconductor switch includes an insulating film on a semiconductor substrate. A switching circuit is on a first portion of the insulating film. The switching circuit is configured to switch a path of a high-frequency signal. A wiring layer is provided on the insulating film. The wiring layering includes a signal wire and a ground wire. A conductive layer is between the wiring layer and the insulating film. The conductive layer, in some embodiments, includes a first conductive region between the high-frequency wiring and the insulating film and a second conductive region between the grounding wiring and the insulating film.

Semiconductor switch

According to one embodiment, a semiconductor switch circuit includes a semiconductor substrate, an insulating film, a semiconductor layer, a first wiring line, a semiconductor switch unit, and a first conductor. The insulating film is provided on the semiconductor substrate. The semiconductor layer is provided on the insulating film. The first wiring line is provided above the insulating film. The semiconductor switch unit is provided on the semiconductor layer and is electrically connected to the first wiring line. The first conductor is provided between the first wiring line and the semiconductor substrate.

Semiconductor switch circuit and semiconductor substrate

According to an embodiment, a semiconductor switch includes a first insulating film on a semiconductor substrate, a first semiconductor layer on the first insulating film, a semiconductor switch circuit on the first semiconductor layer, and a wiring on the first insulating film. The first insulating film being between the wiring and the substrate. The wiring connects the semiconductor switch circuit and a terminal. A polycrystalline semiconductor layer is between the wiring and the first insulating film.

Growing community of inventors

Yokohama Kanagawa, Japan

Atsushi Ishimaru