Hamamatsu-photonics K.k.

Yamaha Corporation

Atsushi Ishida

Terumasa Nagano

Takashi Baba

Noburo Hosokawa

Masanori Okada

Toshiaki Tsuchido

A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

Light detection device

A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

Back-illuminated semiconductor light detecting device

A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each having a light receiving region, the avalanche photodiodes being arranged in a matrix at the semiconductor substrate, and a plurality of through-electrodes electrically connected to corresponding light receiving regions. The plurality of through-electrodes are arranged for each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes. Each of the light receiving regions has, when viewed from a direction perpendicular to a first principal surface of the semiconductor substrate, a polygonal shape including a pair of first sides opposing each other in a row direction and extending in a column direction and four second side opposing four through-electrodes surrounding the light receiving region and extending in directions intersecting with the row direction and the column direction. The length of the first side is shorter than the length of the second side.

Photodetection device with matrix array of avalanche diodes

A photodetecting device includes a semiconductor substrate including a first principal surface and a second principal surface that oppose each other and a plurality of through-electrodes penetrating through the semiconductor substrate in a thickness direction. The semiconductor substrate includes a plurality of avalanche photodiodes arranged to operate in Geiger mode. The plurality of through-electrodes are electrically connected to the corresponding avalanche photodiodes. The semiconductor substrate includes a first area in which the plurality of avalanche photodiodes are distributed in at least a first direction and a second area in which the plurality of through-electrodes are distributed two-dimensionally. The first area and the second area are distributed in a second direction orthogonal to a first direction when viewed from a direction orthogonal to the first principal surface.

Optical sensor

In a plane including the center line of a vertical through hole, it is assumed that a segment that connects a first point corresponding to the edge of an opening of an insulating layer and a second point corresponding to the edge of a second opening is a first segment, a segment that connects the second point and a third point corresponding to an intersection point between the second opening and a surface of the insulating layer is a second segment, and a segment that connects the third point and the first point is a third segment. In the insulating layer, the first area located on one side with respect to the first segment is larger than the sum of the second area surrounded by the first, the second and the third segments and the third area located on the other side with respect to the third segment.

Semiconductor device

An oversampling system (oversampling apparatus), a decoding LSI chip, and an oversampling method capable of decreasing the memory capacity of an output buffer used to oversample and output decoded data for digital audio.

Oversampling apparatus, decoding LSI chip, and oversampling method

Tone generator LSI generates a subframe start signal to be interruptively given to a microprogram, by which the microprogram is activated to issue an interrupt signal to a device driver. In response to the interrupt signal, the device driver prepares control data for use in a next frame. The microprogram receives control data from a RAM at the beginning of each frame and calculates control data for individual samples of the frame on the basis of the received control data as well as control data generated for the last sample of an immediately preceding frame, so as to create a plurality of samples of tone data for each subframe. The thus-created tone data are temporarily written into a buffer and then read out from the buffer in accordance with predetermined clock pulses.

Tone data processing device and method

There are provided a Huffman decoding method and decoder which is capable of carrying out a decoding process at a high speed with a small memory capacity, and requires only a small-sized circuit. Input data encoded by a Huffman code is decoded. A Huffman decoding table is prepared which describes a binary tree corresponding to the Huffman code and having leaves each storing data. A binary tree-based search of the table is carried out based on the input data sequentially acquired by at least one bit to thereby decode the input data encoded by the Huffman code.

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Hamamatsu, Japan

Atsushi Ishida