Honda Giken Kogyo Kabushiki Kaisha

Atsushi Inaba

Nariaki Kuriyama

Satoshi Hiyama

Nobuhiro Fueki

Mizuho Doi

Takashi Hosoi

Tomoyuki Nishio

Yamato Ishikawa

Hiroshi Yamakawa

Sukeyuju Shinotuka

Yasushi Okada

Masanobu Urabe

Katsuhiko Takebe

Kouji Kawabe

A solar cell comprising a substrate of insulating material, a bottom side electrode layer formed on one surface of the substrate, a semiconductor photoelectric conversion layer formed on the bottom side electrode layer, a transparent top side electrode layer formed on the semiconductor photoelectric conversion layer and a non-transparent electrode comprising a plurality of strips of non-transparent conductive layers disposed separately from each other on the top side transparent electrode layer. The solar cell further comprises an additional bottom side electrode layer formed on the opposite surface of the substrate and a plurality of conductive paths connecting the bottom side electrode layer to the additional bottom side electrode layer through holes or slits formed to penetrate the substrate.

Solar cell

A solar cell comprising a substrate of insulating material, a bottom side electrode layer formed on one surface of the substrate, a semiconductor photoelectric conversion layer formed on the bottom side electrode layer, a transparent top side electrode layer formed on the semiconductor photoelectric conversion layer and a non-transparent electrode comprising a plurality of strips of non-transparent conductive layers disposed separately from each other on the top side transparent electrode layer. The solar sell further comrises an additional bottom side electrode layer formed on the opposite surface of the substrate and a plurality of conductive paths for electrically connecting the bottom the electrode layer to said additional bottom side electrode layer through holes or slits formed to penetrate the substrate. Each of the strips of the non-transparent conductive layers is located just above each of the conductive paths, respectively.

A power supply unit has a capacitor unit for supplying electric power to a load. The capacitor unit has at least two blocks each having a plurality of electric double-layer capacitors connected in series. The manner of connection of the at least two blocks is changed over between series connection and parallel connection in dependence on an output required by the load. A switching regulator is connected to the electric charge-storing device. An electric vehicle having the power supply unit installed thereon is also provided.

Power supply unit and electric vehicle incorporating the same

A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.

Acceleration sensor with temperature resistor elements

A capacitor-type power supply unit includes a capacitor block. The capacitor block has a plurality of capacitor cells and bus bars connecting the capacitor cells in series. A plurality of electronic circuit boards are connected respectively to the capacitor cells, for controlling corresponding ones of the capacitor cells. The electronic circuit boards and the bus bars are mounted on the capacitor cells.

Capacitor-type power supply unit

Acceleration sensor

A semiconductor type gas rate sensor which is capable of accurately sensing with a sufficient sensitivity an angular velocity acting on its body made of semiconductor substrates having a nozzle port and a gas path etched therein with a pair of heat wires (heat-sensitive resistance elements) provided in the gas path, wherein an optimal flow of gas injected into the gas path through the nozzle port is ensured by designing the nozzle port of 300 to 1000 microns in width and of not less than 2 mm in length and providing the gas path at its downstream end with an outlet allowing the gas to flow straight out from the gas path therethrough.

Semiconductor type gas rate sensor

A semiconductor gas rate sensor includes a base composed of a first semiconductor substrate and a second semiconductor substrate bonded thereto by a thermosetting adhesive layer deposited on a mating surface of the second semiconductor substrate, the base having a gas flow passage defined therein and a nozzle defined therein for injecting a gas flow into the gas flow passage, and a detector disposed in and extending across the gas flow passage for detecting a deflected state of the gas flow when an angular velocity acts on the base, the nozzle being formed between a recess defined in mating surface of the first semiconductor substrate and the mating surface of the second semiconductor substrate. To manufacture the semiconductor gas rate sensor, the first semiconductor substrate and the second semiconductor substrate are joined to each other with the thermosetting adhesive layer on the mating surface of the second semiconductor substrate, and thereafter, the first semiconductor substrate and the second semiconductor substrate are heated while the second semiconductor substrate is being kept underneath the first semiconductor substrate.

Growing community of inventors

Wako, Japan

Atsushi Inaba