Panasonic Corporation

Atsushi Ikeda

Hideo Nakagawa

Nobuo Aoi

Akihiko Tsuzumitani

Kenshi Kanegae

In order that a top surface of a gate electrode does not have sharp portions, ends of the top surface of the gate electrode are rounded before refractory metal is deposited for silicidation. This reduces intensive application of film stresses which are generated in heat treatment, enabling formation of a silicide layer with a uniform, sufficient thickness.

Semiconductor device and manufacturing method thereof

In a semiconductor device including: an insulating film () formed over a substrate (); a buried metal interconnect () formed in the insulating film (); and a barrier metal film (A) formed between the insulating film () and the metal interconnect (), the barrier metal film (A) includes a metal oxide film (), a metal compound film () and a metal film () stacked in this order from a side in which the insulating film () exists to a side in which the metal interconnect () exists. Elastic modulus of the metal compound film () is larger than that of the metal oxide film ().

Semiconductor device and method for fabricating the same

Semiconductor device and manufacturing method thereof with rounded gate including a silicide on the top and at the corners

A semiconductor device includes an insulation filmformed on a silicon substrate, a buried metal interconnectformed in the insulation film, and a barrier metal filmformed between the insulation filmand the metal interconnect. The barrier metal filmis a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.

Growing community of inventors

Shiga, Japan

Atsushi Ikeda