Sae Magnetics (h.k.) Limited

Headway Technologies, Incorporated

Tdk Corporation

Hitachi, Ltd.

Sae Magentics (h.k.) Ltd.

Sae Magntics (h.k.) Ltd.

Atsushi Iijima

Yoshitaka Sasaki

Hiroyuki Ito

Kazuki Sato

Hiroshi Ikejima

Shigeki Tanemura

Hironori Araki

Wei Xiong

Kazumasa Fukuda

Makoto Yoshida

Taro Oike

Akifumi Kamijima

Yukinori Ikegawa

Tatsuya Shimizu

Seiichiro Tomita

Kyung-Ku Choi

Daisuke Iwanaga

Seiji Yari

Katsuya Kanakubo

Katsunori Osanai

Ryuji Fujii

Kazuo Ishizaki

Noboru Yamanaka

Tatsuya Harada

Nobuya Oyama

Kazumasa Yasuda

Kenjiro Hata

Akihide Tanaka

Kazushi Nishiyama

Jun Kawaji

Fei He

Daisuke Iitsuka

Takao Noguchi

Suguru Ueda

Junko Tange

Panjalak Rokrakthong

Atsushi Unemoto

Masahiro Nakano

Hirohiko Kamimura

A magnetically actuated MEMS switchincludes a first magnetic core portion, a first signal line, a first contact point, a second magnetic core portion, a second signal line, a second contact point, and a first coil portionand a second coil portionserving as a magnetic field applying portion that causes a current to flow in conductor coil to apply a magnetic field to the first magnetic core portionand the second magnetic core portion. The first contact pointis displaced depending on the presence or absence of a magnetic field applied by the magnetic field applying portion. Connection and disconnection between the first contact pointand the second contact pointare switched in response to displacement of the first contact point

Magnetically actuated MEMS switch

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The piezoelectric-material film includes a size larger than the upper electrode film, a riser end-surface and step-surface formed on a top-surface of the upper electrode film side. The riser end-surface connects smoothly with a peripheral end-surface of the upper electrode film and vertically intersects with the top-surface. The step-surface intersects vertically with the riser end-surface. The lower piezoelectric-material protective-film, and the upper piezoelectric-material protective-film are formed with alloy material including Fe as main ingredient and having Co and Mo, by Ion beam deposition.

Thin-film piezoelectric-material element, method of manufacturing the same, head gimbal assembly and hard disk drive

A piezoelectric device comprises a pressure chamber forming layer, a vibration plate disposed on and connected with the pressure chamber forming layer to form a pressure chamber, and a piezoelectric element disposed on the vibration plate and used for driving the vibration plate to move and thus changing a volume of the pressure chamber, wherein the piezoelectric element is disposed on the vibration plate in such a manner as to cover a portion of the pressure chamber, the piezoelectric element has two opposite ends respectively extending beyond an edge of the pressure chamber and covering the pressure chamber forming layer. The piezoelectric device of the present invention can efficiently actuate the vibration plate, eliminate undesired displacements of the vibration plate in the opposite direction at the edge of the chamber, and provide higher displacement sensitivity to driving voltage.

Thin-film piezoelectric actuator

A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb(ZrTi)O, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

Thin-film piezoelectric material substrate, thin-film piezoelectric material element, head gimbal assembly, ink jet head and method of manufacturing the thin-film piezoelectric

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film. The piezoelectric-material film includes a size larger than the upper electrode film, a riser end-surface and step-surface formed on a top-surface of the upper electrode film side. The riser end-surface connects smoothly with a peripheral end-surface of the upper electrode film and vertically intersects with the top-surface. The step-surface intersects vertically with the riser end-surface.

Provided is a semisolid electrolyte solution to improve a battery capacity of a secondary battery. The semisolid electrolyte solution includes: a solvated electrolyte salt; and an ether-based solvent that constitutes the solvated electrolyte salt and a solvated ion liquid, in which a mixing ratio of the ether-based solvent to the solvated electrolyte salt is larger than 0 and equal to or less than 0.5 in terms of a molar ratio. Desirably, the mixing ratio of the ether-based solvent to the solvated electrolyte salt is 0.2 to 0.5 in terms of the molar ratio. When a low viscosity solvent is provided, a mixing ratio of the low viscosity solvent to the solvated electrolyte salt is 2 to 6 in terms of the molar ratio.

Semisolid electrolyte solution, semisolid electrolyte, semisolid electrolyte layer, electrode, and secondary battery

A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction. A manufacturing method for the capacitor includes forming the dielectric structure, and forming the first electrode and the second electrode simultaneously after the formation of the dielectric structure.

Method of manufacturing a capacitor including dielectric structure formed of sintered body

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The lower piezoelectric-material protective-film and the upper piezoelectric-material protective-film are formed respectively in the lower side of the lower electrode film and the upper side of the upper electrode film, of the laminated structure part, so as to sandwich the laminated structure part. The lower piezoelectric-material protective-film, and the upper piezoelectric-material protective-film are formed with alloy material including Fe as main ingredient and having Co and Mo, by Ion beam deposition.

Thin-film piezoelectric-material element with protective film composition and insulating film through hole exposing lower electrode film

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The lower piezoelectric-material protective-film and the upper piezoelectric-material protective-film are formed respectively in the lower side of the lower electrode film and the upper side of the upper electrode film, of the laminated structure part, so as to sandwich the laminated structure part.

Head gimbal assembly thin-film piezoelectric-material element arranged in step part configuration with protective films

A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction.

Capacitor including dielectric structure formed of sintered body, and manufacturing method thereof

Thin-film piezoelectric material substrate, thin-film piezoelectric material element, head gimbal assembly, ink jet head and method of manufacturing the thin-film piezoelectric material element

A manufacturing method of an epitaxial thin film piezoelectric element includes: providing a substrate; forming a bottom electrode layer on the substrate by epitaxial growth process; forming a first piezoelectric layer that has c-axis orientation on the bottom electrode layer by epitaxial growth process; forming a second piezoelectric layer that has c-axis orientation and different phase structure from the first piezoelectric layer on the first piezoelectric layer by epitaxial growth process; and forming a top electrode layer on the second piezoelectric layer. The thin film piezoelectric element has good thermal stability, low temperature coefficient and high piezoelectric constant.

Thin film piezoelectric element and manufacturing method thereof

A magnetic head for perpendicular magnetic recording includes a read head unit, a write head unit disposed forward of the read head unit along the direction of travel of a recording medium, a heater that generates heat for causing the medium facing surface to protrude in part, an expansion layer that makes part of the medium facing surface protrude, and a sensor that detects contact of the part of the medium facing surface with the recording medium. The write head unit includes a main pole, a write shield, and a return path section. The return path section includes a yoke layer located backward of the main pole along the direction of travel of the recording medium, a first coupling part that couples the yoke layer and the write shield to each other, and a second coupling part that is located away from the medium facing surface and couples the yoke layer and the main pole to each other.

Magnetic head for perpendicular magnetic recording that includes a sensor for detecting contact with a recording medium

A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part, a first top surface of the upper electrode film and a second top surface of the lower electrode film, and has a first through hole formed on a first top disposed part and a second through hole formed on a second top disposed part. Further, the surface layer insulating film has an upper electrode pad being in directly contact with a first inside exposed surface and a lower electrode pad being in directly contact with a second inside exposed surface.

Thin-film piezoelectric material element, head gimbal assembly and hard disk drive

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Hong Kong, China

Atsushi Iijima