Sumitomo Electric Industries, Limited

Atsushi Hamakawa

Takashi Kato

Masakazu Shigehara

Goro Sasaki

Michio Murata

Takashi Nakabayashi

Hidetoshi Kobayashi

A light generating modulecomprises a housinga semiconductor light-emitting devicea driving elementand a monitoring light-receiving deviceThe monitoring light-receiving deviceis optically coupled with the semiconductor light-emitting deviceThe driving elementdrives the semiconductor light-emitting deviceThe housingcontains the semiconductor light-emitting devicethe driving elementand the monitoring light-receiving deviceThese elementsandare disposed sequentially along a predetermined axis. The driving elementis disposed between the semiconductor light-emitting deviceand the monitoring light-receiving deviceThis configuration makes it possible to dispose the driving elementclose to the semiconductor light-emitting deviceso as to achieve a transmission rate of 10 Gbps without degrading the optical coupling between the semiconductor light-receiving deviceand the semiconductor light-emitting device

Light generating module

The present invention relates to a light emitting device module which can easily be made and can yield a stable output characteristic, and a method of making the same. The light emitting device module in according to the present invention comprises a semiconductor device in which an active region having a light exit facet and a light reflecting facet with a lower light reflectivity than the light exit facet respectively at both ends is fabricated along a predetermined reference axis, and an optical fiber having a grating provided along the longitudinal direction of the core region and an end facet arranged so as to face the light exit facet. In particular, in the light emitting device module according to the present invention, the light exit facet of the active region is inclined with respect to the light reflecting facet of the active region by a predetermined angle, thereby the light reflecting facet of the active region and the grating constitute an external cavity through the light exit facet.

Light emitting device module

A semiconductor laser module in which: the distance between a semiconductor laser chip and a diffraction grating can be shortened; the light output spectrum is stabilized; and the output characteristic does not fluctuate due to the external condition. In the semiconductor laser module, a diffraction grating structure is constituted in an optical fiber by at least two diffraction gratings for reflecting light with different wavelengths respectively. The diffraction grating structure is formed in a place corresponding to the inside of the package or the inside of the coupling means.

Semiconductor laser module

A semiconductor laser module includes a semiconductor laser having an active region between a light-reflecting surface and a light-exit surface thereof, and an optical fiber optically coupled to the semiconductor laser and including an optical fiber diffraction grating. The optical fiber diffraction grating selectively reflects light within a predetermined wavelength band. The wavelength band has a width larger than a wavelength interval of a longitudinal mode of light resonating between the light-reflecting surface and the light-exit surface.

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Yokohama, Japan

Atsushi Hamakawa