Sharp Display Technology Corporation

Atsushi Hachiya

Yuhichi Saitoh

Hiroaki Furukawa

Kuniaki Okada

Hiroshi Matsukizono

An active matrix substrate includes, in order, a pixel TFT including an oxide semiconductor layer, a first interlayer insulating layer covering the oxide semiconductor layer and a gate electrode, a first organic insulating layer, and a pixel electrode. A first pixel contact hole is formed in the first interlayer insulating layer, and a second pixel contact hole is formed in the first organic insulating layer. The pixel electrode is made of a transparent conductive material, a first electrode layer includes a first portion in contact with a drain contact region of the oxide semiconductor layer in the first pixel contact hole and a second portion located in the second pixel contact hole, a second electrode layer includes a third portion in contact with the second portion and a fourth portion located on the first organic insulating layer, and a third electrode layer includes a fifth portion in contact with the fourth portion and a sixth portion located on the second organic insulating layer. A length of the second electrode layer in a row direction is less than or equal to a length of the third electrode layer in the row direction. The active matrix substrate further includes a second organic insulating layer filling the second pixel contact hole.

Active matrix substrate and liquid crystal display apparatus

An active matrix substrate includes a first TFT disposed in each of pixel regions, a first flattened layer covering the first TFT, and a pixel electrode provided on the first flattened layer. The first TFT includes a lower gate electrode, a lower gate insulating layer, an oxide semiconductor layer, an upper gate insulating layer, and an upper gate electrode. The active matrix substrate further includes a first connection electrode for electrically connecting a drain contact region of the oxide semiconductor layer and the pixel electrode. The first flattened layer includes a pixel contact hole formed so as to expose a part of the first connection electrode. The bottom face of the pixel contact hole at least partially overlaps, of a lower gate metal layer including a lower gate electrode and an upper gate metal layer including an upper gate electrode, at least the lower gate metal layer when viewed from the normal direction of the substrate. The first connection electrode is formed from a transparent conductive material.

Active matrix substrate and liquid crystal display device

An active matrix substrate includes a substrate, a pixel TFT that is supported by the substrate, provided corresponding to each of a plurality of pixel areas, and includes an oxide semiconductor layer, an organic insulating layer disposed above at least the oxide semiconductor layer of the pixel TFT, and an inorganic insulating layer disposed in contact with an upper surface of the organic insulating layer on the organic insulating layer. The organic insulating layer and the inorganic insulating layer are provided with a plurality of dual-layer hole structure portions, each of the dual-layer hole structure portions includes a through-hole provided in the inorganic insulating layer and a bottomed hole provided in the organic insulating layer and positioned below the through-hole, and the through-hole is positioned on an inner side of an outer edge of the bottomed hole when viewed from a normal direction of the substrate.

Active matrix substrate, liquid crystal display device and method for manufacturing active matrix substrate

An active matrix substrate includes: a thin film transistor located in each pixel region; and a pixel electrode electrically coupled with the thin film transistor. The thin film transistor includes a lower gate electrode, a lower gate insulating layer, an oxide semiconductor layer, an upper gate insulating layer, and an upper gate electrode. The width of an upper gate line electrically coupled with the upper gate electrode is greater than the width of a lower gate line electrically coupled with the lower gate electrode.

Growing community of inventors

Kameyama, Japan

Atsushi Hachiya