Sharp Kabushiki Kaisha Corporation

Atsushi Hachiya

Hiroaki Furukawa

Yuhichi Saitoh

Tomohisa Aoki

Kazuya Tsujino

Kuniaki Okada

Tomoko Teranishi

Chihiro Tachino

A display device includes a pixel circuit and a light-emitting element, the pixel circuit including: a transistor with a first structure including a crystalline silicon semiconductor film and a first gate electrode; and a transistor with a second structure including an oxide semiconductor film and a second gate electrode, the display device further includes: a first interlayer insulation film; and a second interlayer insulation film, wherein the pixel circuit includes: a drive transistor that has the first structure: and a capacitive element, the capacitive element includes: a first capacitor electrode electrically connected to a first gate electrode of the drive transistor; a second capacitor electrode opposite the first capacitor electrode; and a dielectric film between the first capacitor electrode and the second capacitor electrode, and the dielectric film is disposed in a different layer than are the first interlayer insulation film and the second interlayer insulation film.

Display device and method of manufacturing display device

An oxide semiconductor layer includes a second channel region and a second conductor region. The lower metal layer includes a contact wire in contact with the second conductor region. The upper metal layer includes an upper wire. A second interlayer insulating film is provided with a second contact hole overlapping an upper wire and the contact wire. The second conductor region and the upper wire electrically connect together through the contact wire.

Display device having a first transistor including a crystalline silicon semiconductor layer and a second transistor including an oxide semiconductor layer

A crystalline silicon semiconductor layer includes a first channel region and a second conductor region. An oxide semiconductor layer includes a second channel region and a second conductor region. An lower metal layer includes a lower wire. The lower wire is in contact with a first conductor region in a first contact hole. The first conductor region and the second conductor region are electrically connected together through the lower wire.

Display device

One conductor region of a crystalline silicon semiconductor layer in a first transistor is electrically connected to one conductor region of an oxide semiconductor layer in a second transistor through a first contact hole and a second contact hole communicating with each other.

An electrowetting device includes a first substrate, a plurality of first electrodes formed on the first substrate, a dielectric layer formed on the plurality of first electrodes, a first water-repellent layer formed on the dielectric layer, a second substrate, a second electrode formed on the second substrate, and a second water-repellent layer formed on the second electrode. The first substrate and the second substrate are arranged with a gap between the first water-repellent layer and the second water-repellent layer. The first electrode includes an indium oxide-zinc oxide layer, the dielectric layer includes a silicon nitride layer, and the silicon nitride layer is formed directly on the indium oxide-zinc oxide layer.

Electrowetting device

A display device in the present disclosure includes the following: a substrate; a plurality of source bus lines extending in a first direction above the substrate; a plurality of semiconductor layers extending in the first direction above the plurality of source bus lines; and a first groove-shaped recess extending in a second direction crossing the first direction, the first groove-shaped recess constituting a first contact hole extending from above the plurality of source bus lines to the plurality of source bus lines. Each of the plurality of semiconductor layers is disposed along a surface of the first groove-shaped recess so as to cross the first groove-shaped recess, and each of the plurality of semiconductor layers is electrically connected to each of the plurality of source bus lines on the bottom surface of the first groove-shaped recess.

Semiconductor device and display device

Provided are an active matrix substrate having a reduced driving voltage and excellent adhesion between a dielectric layer and a water-repellent layer and a microfluidic device including the substrate. The active matrix substrate includes an array electrode, a dielectric layer covering the array electrode, and a first water-repellent layer in this order on a first substrate. The dielectric layer includes a silicon nitride film located on the side in contact with the first water-repellent layer, and the silicon nitride film has a surface layer region containing oxygen in the surface on the side in contact with the first water-repellent layer.

Active matrix substrate, microfluidic device provided with same, method for producing said active matrix substrate, and method for producing said microfluidic device

An active matrix substrate includes: a first substrate; and first electrodes, a dielectric layer covering the first electrodes, and a first water-repelling layer in this sequence on the first substrate, wherein the dielectric layer has a multilayer structure including two or more layers and includes a silicon nitride film and a metal-oxide film between the silicon nitride film and the first water-repelling layer, and the silicon nitride film has an oxygen-containing surface layer region on a surface thereof that is in contact with the metal-oxide film.

Method of manufacturing active matrix substrate

An active matrix substrate includes a demultiplexer circuit which includes multiple TFTs. Each TFT includes a gate electrode, an oxide semiconductor layer that includes a source contact area, a drain contact area, and an area between a source and a drain that includes a channel region, a channel protection layer that covers only a portion of the area between the source and the drain, a source electrode that is brought into contact with the source contact area, and a drain electrode that is brought into contact with the drain contact area. At a cross-section in a channel length direction, of each TFT, an end portion facing toward the channel region, of one of the source and drain electrodes is brought into contact with the channel protection layer, and an end portion facing toward the channel region, of the other is positioned at a distance away from the channel protection layer.

Growing community of inventors

Sakai, Japan

Atsushi Hachiya