Sony Corporation

Kabushiki Kaisha Toshiba

Uacj Corporation

Denso Corporation

Toshiba Memory Corporation

Furukawa-Sky Aluminum Corporation

Atsushi Fukumoto

Masahiro Ishiyama

Yoshiyuki Tsuda

Atsushi Inoue

Toshio Okamoto

Shunji Yoshimura

Kenji Tanaka

Kiyoshi Ohsato

Toshiki Udagawa

Akio Niikura

Masumi Ono

Kouichi Yasuda

Katsuhisa Aratani

Fumiki Aiso

Mitsuru Toishi

Isao Ichimura

Atsushi Shimbo

Toshio Watanabe

Hajime Nagano

Shinichi Kai

Keiichi Tsutsui

Masataka Goto

Masaaki Hara

Fumisada Maeda

Yoshinari Kumaki

Masayuki Arai

Tomoki Yamayoshi

Mikio Sugiki

Kenji Yamamoto

Kenji Negura

Masumi Ohta

Koji Takasaki

Junichi Mochizuki

Akira Suzuki

Yoshiaki Kato

Kenjiro Watanabe

Makoto Ando

Yasuhito Yoshimizu

Takashi Nakao

Michio Oka

Shinji Yamada

Katsuhiro Seo

Tatsuo Ozaki

Shin Masuhara

Isamu Nakao

Yasunaga Itoh

Yasuhito Tanaka

Koichi Yasuda

Naoto Kojima

Kensuke Fujimoto

Toshihide Ninagawa

Yoshiyuki Oya

Keiichi Okazaki

Takahiro Shinoda

Yutaka Kasami

Kaoru Okazoe

Shoichi Sakoda

Akihiro Daito

Yoshiaki Fukuzumi

Hideki Yoshida

Koichiro Kishima

Tatsuya Narahara

Hiroshi Kano

Makoto Mizukami

Masayoshi Kanno

Takashi Izumida

Tadashi Iguchi

Masaki Kondo

Tomohiro Shoji

Gary Durack

Hitoshi Okada

Tomoki Ono

Hisashi Masuda

Toshinari Takahashi

Naoya Eguchi

Yuji Segawa

Tatsuya Ide

Tomiji Tanaka

Motoi Kimura

Yoshiki Okamoto

Kiyohito Nishihara

Daigo Ichinose

Hirokazu Ishida

Takuo Ohashi

Yoichiro Bekki

Wataru Nakagawa

Sadayuki Kamiya

Shigeki Takagawa

Shogo Yamada

Koji Ishioka

Kazuyuki Hirooka

Yasuyuki Takeshita

Junya Fujita

Tomonari Shioda

Shota Terachi

Mikio Takiguchi

Wataru Narita

Yusuke Ohashi

Terumasa Ito

An aluminum alloy heat exchanger includes a core material formed of an aluminum alloy comprising Mn of 0.60 to 2.00 mass % and Cu of 1.00 mass % or less, with the balance being Al and inevitable impurities, and a sacrificial anode material formed of an aluminum alloy comprising Zn of 2.50 to 10.00 mass %, with the balance being Al and inevitable impurities. Pitting potential of a sacrificial anode material surface of a tube of the aluminum alloy heat exchanger in a 5% NaCl solution is −800 (mV vs Ag/AgCl) or less, and pitting potential of an aluminum fin of the aluminum alloy heat exchanger in a 5% NaCl solution is less than the pitting potential of the sacrificial anode material surface of the tube of the aluminum alloy heat exchanger in a 5% NaCl solution.

Aluminum alloy heat exchanger

A method of manufacturing a fin material made of an aluminum alloy for heat exchangers with no fin buckling deformation and having excellent buckling resistance in a temperature range of 400° C. to 580° C. before a filler alloy melts at the time of brazing is provided. The fin material made of an aluminum alloy for heat exchangers contains 1.0 to 2.0 mass % of Mn, 0.7 to 1.4 mass % of Si, and 0.05 to 0.3 mass % of Fe, with the balance being Al and unavoidable impurities, in which a number density of intermetallic compounds having a circle-equivalent diameter of 0.025 to 0.4 μm is 3.0×10particles/mmor more, and an amount of solid solution of Mn is 0.3 mass % or less.

Fin material made of aluminum alloy for heat exchanger

An aluminum alloy brazing sheet used for brazing in an inert gas atmosphere without using flux includes a core material of aluminum or aluminum alloy, and a brazing material of aluminum alloy including Si of 4.0 mass % to 13.0 mass % and cladding one side surface or both side surfaces of the core material. One or both of the core material and the brazing material includes any one or two or more types of X atoms (X is Mg, Li, Be, Ca, Ce, La, Y, and Zr). The aluminum alloy brazing sheet is a brazing sheet in which oxide particles including the X atoms and having a volume change ratio of 0.99 or lower with respect to an oxide film before brazing heating are formed on a surface thereof, by brazing heating.

Aluminum alloy brazing sheet, method for manufacturing the same, aluminum alloy sheet, and heat exchanger

An aluminum alloy fin material for a heat exchanger is made of an aluminum alloy including 0.05 mass % to 0.5 mass % of Si, 0.05 mass % to 0.7 mass % of Fe, 10 mass % to 2.0 mass % of Mn, 0.5 mass % to 1.5 mass % of Cu, and 3.0 mass % to 7.0 mass % of Zn, with the balance being Al and unavoidable impurities. In an L-ST plane thereof, second-phase grains having an equivalent circle diameter equal to or more than 0.030 &#x3bc;m and less than 0.50 &#x3bc;m have a perimeter density of 0.30 &#x3bc;m/&#x3bc;mor more, second-phase grains having an equivalent circle diameter equal to or more than 0.50 &#x3bc;m have a perimeter density of 0.030 &#x3bc;m/&#x3bc;mor more, and specific resistance thereof at 20&#xb0; C. is 0.030 &#x3bc;&#x3a9;m or more.

Aluminum alloy fin material for heat exchanger and method for manufacturing the same

A method for producing an aluminum alloy clad material having a core material and a sacrificial anode material clad on at least one surface of the core material, wherein the core material comprises an aluminum alloy comprising 0.050 to 1.5 mass % (referred to as '%' below) Si, 0.050 to 2.0% Fe and 0.50 to 2.00% Mn; the sacrificial anode material includes an aluminum alloy containing 0.50 to 8.00% Zn, 0.05 to 1.50% Si and 0.050 to 2.00% Fe; the grain size of the sacrificial anode material is 60 &#x3bc;m or more; and a ratio R/Ris 0.30 or less, wherein R(&#x3bc;m) is a grain size in a thickness direction and R(&#x3bc;m) is a grain size in a rolling direction in a cross section of the core material along the rolling direction; a production method thereof; and a heat exchanger using the clad.

Method for producing aluminum alloy clad material

An aluminum alloy material comprises: Si: less than 0.2 mass %, Fe: 0.1 to 0.3 mass %, Cu: 1.0 to 2.5 mass %, Mn: 1.0 to 1.6 mass %, and Mg: 0.1 to 1.0 mass %, the balance being Al and incidental impurities. A number density of Al&#x2014;Mn compound having a circle equivalent diameter of not less than 0.1 &#x3bc;m is not less than 1.0&#xd7;10mm, and a number density of AlCu having a circle equivalent diameter of not less than 0.1 &#x3bc;m is not more than 1.0&#xd7;10mm.

Aluminum alloy material and method for producing the same, and aluminum alloy clad material and method for producing the same

An aluminum alloy brazing sheet is disclosed including a core material made of pure aluminum or aluminum alloy, one side or both sides of the core material, being clad with a brazing material, with an intermediate material interposed between the core material and the brazing material, the intermediate material including 0.4 to 6 mass % of Mg, further including at least one of Mn, Cr, and Zr, and the balance being Al and inevitable impurities, having the Mn content not more than 2.0 mass %, the Cr content not more than 0.3 mass %, and the Zr content not more than 0.3 mass %, with the total content of Mn, Cr, and Zr being at least 0.1 mass %, the brazing material including 4 to 13 mass % of Si, and the balance being Al and inevitable.

Aluminum alloy brazing sheet

A brazing sheet is provided for use in brazing performed in an inert gas atmosphere both using flux and without using flux. The brazing sheet includes an aluminum-based core, an intermediate material layered on the core and being composed of an aluminum alloy that contains Mg: 0.40-3.0 mass %, and a filler metal layered on the intermediate material and being composed of an aluminum alloy that contains Si: 6.0-13.0 mass % and Mg: less than 0.050 mass %. The brazing sheet satisfies the formula below where M [mass %] is the Mg content in the intermediate material, ti [&#x3bc;m] is the thickness of the intermediate material, and tf [&#x3bc;m] is the thickness of the filler metal:&#x2265;10.15&#xd7;ln()+3.7.

Brazing sheet, manufacturing method thereof, and aluminum structure brazing method

An aluminum alloy brazing sheet which is thin but has excellent weldability and post-brazing strength. An aluminum alloy brazing sheet having a core material comprising an aluminum alloy, an Al&#x2014;Si based brazing filler metal clad on one surface of the core material and a sacrificial anode material clad on the other surface of the core material: wherein the core material comprises certain amounts of Si, Fe, Cu and Mn and certain amounts of one, two or more selected from Ti, Zr, Cr and V; the sacrificial anode material comprises certain amounts of Si, Fe, Mg and Zn; in a cross section parallel to the longitudinal direction and along the thickness direction, the interface between the core material and the sacrificial anode material includes 300 pieces/mm or less of an Al&#x2014;Mg&#x2014;Cu based intermetallic compound; and the core material and the sacrificial anode material have an unrecrystallized structure.

Aluminum alloy brazing sheet and method for producing same

According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.

Semiconductor device

According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided on the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending through the stacked body in a stacking direction of the stacked body, and a charge storage portion provided between the semiconductor body and the electrode layers. The semiconductor body includes a first semiconductor film, and a second semiconductor film provided between the first semiconductor film and the charge storage portion. An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film.

Semiconductor device and method for manufacturing semiconductor device

An aluminum alloy fin material for heat exchangers, containing 0.5 to 1.5 mass % of Si; more than 1.0 mass % but not more than 2.0 mass % of Fe; 0.4 to 1.0 mass % of Mn; and 0.4 to 1.0 mass % of Zn, with the balance being Al and unavoidable impurities, wherein a metallographic microstructure before braze-heating is such that a density of second phase particles having a circle-equivalent diameter of less than 0.1 &#x3bc;m is less than 1&#xd7;10particles/mm, and that a density of second phase particles having a circle-equivalent diameter of 0.1 &#x3bc;m or more is 1&#xd7;10particles/mmor more, wherein a tensile strength before braze-heating, TS(N/mm), a tensile strength after braze-heating, TS(N/mm), and a fin sheet thickness, t (&#x3bc;m), satisfy: 0.4&#x2264;(TS&#x2212;TS)/t&#x2264;2.1, and wherein the sheet thickness is 150 &#x3bc;m or less; and a method of producing the same.

Aluminum alloy fin material for heat exchangers, and method of producing the same

An aluminum alloy fin material for heat exchangers, containing 0.5 to 1.5 mass % of Si; 0.1 to 1.0 mass % of Fe; 0.8 to 1.8 mass % of Mn; and 0.4 to 2.5 mass % of Zn, with the balance being Al and unavoidable impurities, wherein a metallographic microstructure before braze-heating is such that a density of second phase particles having a circle-equivalent diameter of less than 0.1 &#x3bc;m is less than 1&#xd7;10particles/mm, and that a density of second phase particles having a circle-equivalent diameter of 0.1 &#x3bc;m or more is 5&#xd7;10particles/mmor more, wherein a tensile strength before braze-heating, TS(N/mm), a tensile strength after braze-heating, TS(N/mm), and a sheet thickness of the fin material, t (&#x3bc;m), satisfy a relationship: 0.4&#x2264;(TS&#x2212;TS)/t&#x2264;2.1, and wherein the sheet thickness is 150 &#x3bc;m or less; and a method of producing the same.

An aluminum alloy brazing sheet having high corrosion resistance is provided, which develops the sacrificial anticorrosion effect in both surfaces of the sheet, which has the brazing function in one of both the surfaces, and which prevents the occurrence of preferential corrosion. A channel forming component for a vehicular heat exchanger is also provided by utilizing the aluminum alloy brazing sheet. An aluminum alloy brazing sheet having high corrosion resistance includes an aluminum alloy core, a filler material clad on one surface of the core, and a sacrificial anode material clad on the other surface of the core, wherein the filler material, the sacrificial anode material, and the core have respective predetermined alloy compositions. A channel forming component for a vehicular heat exchanger is manufactured using the aluminum alloy brazing sheet having high corrosion resistance.

High corrosion-resistant aluminum alloy brazing sheet and channel forming component for vehicular heat exchanger using same

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Kanagawa, Japan

Atsushi Fukumoto