Renesas Electronics Corporation

Atsushi Fujiki

Nobuya Koike

Yukihiro Sato

Tatsuhiro Seki

Hiroyuki Nakamura

Akira Muto

Kisho Ashida

Norio Kido

Yoshito Nakazawa

Yuichi Machida

Masaki Tamura

Katsuo Arai

Hirokatsu Suzuki

It is made for the layout of the mounting wiring at the time of mounting to become efficient by changing the structure of a semiconductor device. A first chip is mounted on a first die pad, and a second chip is also mounted on a second die pad. A first die pad and a second die pad do division structure in parallel to the first side and second side of sealing body. As a result, the pin for an output from a first chip and the pin for control of the circuit for a drive can make it able to project from a counter direction, and can set the wiring layout at the time of mounting as the minimum route.

Semiconductor device

A semiconductor chip in which a power MOSFET is placed above a semiconductor chip in which another power MOSFET is formed and they are sealed with an encapsulation resin. The semiconductor chips are so arranged that the upper semiconductor chip does not overlap with a gate pad electrode of the lower semiconductor chip in a plan view. The semiconductor chips are identical in size and the respective source pad electrodes and gate pad electrodes of the lower semiconductor chip and the upper semiconductor chip are identical in shape and arrangement. The lower semiconductor chip and the upper semiconductor chip are arranged with their respective centers displaced from each other. Accordingly, the size of a semiconductor device can be reduced.

Semiconductor device for a DC-DC converter

A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.

To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP, power MOSFETs Qand Qfor the switch, a diode DDfor detecting the heat generation of the power MOSFET Q, a diode DDfor detecting the heat generation of the power MOSFET Q, and plural pad electrodes PD are formed. The power MOSFET Qand the diode DDare arranged in a first MOSFET region RGon the side of a side SD, and the power MOSFET Qand the diode DDare arranged in a second MOSFET region RGon the side of a side SD. The diode DDis arranged along the side SD, the diode DDis arranged along the side SD, and all pad electrodes PD other than the pad electrodes PDSand PDSfor the source are arranged along a side SDbetween the diodes DDand DD

A semiconductor device which combines reliability and the guarantee of electrical characteristics is provided. A power MOSFET and a protection circuit formed over the same semiconductor substrate are provided. The power MOSFET is a trench gate vertical type P-channel MOSFET and the conduction type of the gate electrode is assumed to be P-type. The protection circuit includes a planar gate horizontal type offset P-channel MOSFET and the conduction type of the gate electrode is assumed to be N-type. These gate electrode and gate electrode are formed in separate steps.

Semiconductor device and manufacturing method of the same

The radiation performance of a resin sealed semiconductor package is enhanced and further the fabrication yield thereof is enhanced. A drain terminal coupled to the back surface drain electrode of a semiconductor chip is exposed at the back surface of an encapsulation resin section. Part of the following portion and terminal is exposed at the top surface of the encapsulation resin section: the first portion of a source terminal coupled to the source pad electrode of the semiconductor chip and a gate terminal coupled to the gate pad electrode of the semiconductor chip. The remaining part of the second portion of the source terminal and the gate terminal is exposed at the back surface of the encapsulation resin section. When this semiconductor device is manufactured, bonding material and a film member are placed between the drain terminal and the semiconductor chip. At the same time, paste-like bonding material and a film member are placed between the source terminaland gate terminal and the semiconductor chip. The paste-like bonding material is cured and turned into bonding material. As the result of use of the film members, variation in the thickness of the bonding material is suppressed.

Growing community of inventors

Tokyo, Japan

Atsushi Fujiki