Mitsubishi Electric Corporation

Atsushi Era

Susumu Hatakenaka

Takahiro Yamamoto

Akihito Ohno

An epitaxial wafer according to the present disclosure includes: a substrate; a buffer layer formed of a crystal having the composition formula represented by AlGaInN (x+y+z=1, y>0) on the substrate; a back-barrier layer formed of a crystal having the composition formula represented by AlGaInN (x+y+z=1, y>0, z>0) on the buffer layer; a channel layer formed of a crystal having the composition formula represented by AlGaInN (x+y+z=1, y>0) on the back-barrier layer; and an electron-supply layer formed of a crystal having the composition formula represented by AlGaInN (x+y+z=1, x>0) on the channel layer. The channel layer is constituted with an upper channel layer underneath the electron-supply layer and a lower channel layer on the back-barrier layer, and the lower channel layer has a C concentration higher than the upper channel layer and contains Si.

Epitaxial wafer, semiconductor device, and method for manufacturing epitaxial wafer

A method of manufacturing an optical semiconductor device includes a step of forming semiconductor layers on the surface of an n-type InP substrate; an etching step of forming an active layer ridge by etching part of the semiconductor layers; a cleaning step of removing Si having adhered to the surface of the etched semiconductor layers while feeding a source gas for the crystal growth and an etching gas; and a crystal growth step of forming buried layers along both sidewalls of the active layer ridge at a processing temperature higher than that in the cleaning step, and the cleaning step is performed with the ridge being kept in shape.

Method for producing photosemiconductor device

Examples of a method for producing a semiconductor device includes: forming a barrier layer having a composition of InAlN or InAlGaN over a channel layer; forming a transition layer having a composition of InGaN on the barrier layer while raising a growth temperature; and forming a cap layer of GaN on the transition layer.

Method for producing semiconductor device and semiconductor device

A Ga source gas and a nitrogen source gas are supplied to form a GaN channel layer on a semiconductor substrate. Next, a temperature is lowered while supplying at least the nitrogen source gas. Next, the Ga source gas is not supplied and an Al source gas and the nitrogen source gas are supplied. Next, the temperature is raised while not supplying the Al source gas and the Ga source gas and supplying the nitrogen source gas. Next, the Al source gas and the nitrogen source gas are supplied and at least one of the Ga source gas and an In source gas is supplied to form a AlGaInN barrier layer (x+y+z=1, x&#x3e;0, y&#x2265;0, z&#x2265;0, y+z&#x3e;0).

Method for manufacturing group III-V nitride semiconductor epitaxial wafer

A semiconductor device includes: a substrate; a first GaN layer on the substrate and containing carbon; a second GaN layer on the first GaN layer and containing transition metal and carbon; a third GaN layer on the second GaN layer and containing transition metal and carbon; and an electron supply layer on the third GaN layer and having a larger band gap than GaN. A transition metal concentration of the third GaN layer gradually decreases from that of the second GaN layer from the second GaN layer toward the electron supply layer and is higher than 1&#xd7;10cmat a position of 100 nm deep from a bottom end of the electron supply layer. A top end of the second GaN layer is deeper than 800 nm from the bottom end. A carbon concentration of the third GaN layer is lower than those of the first and second GaN layers.

GaN semiconductor device comprising carbon and iron

A method of manufacturing a semiconductor element includes a first step of epitaxially growing an AlN layer on a substrate, a second step of forming a buffer layer on the AlN layer by epitaxially growing AlGaInN where x, y, and z satisfy x+y+z=1 and y is not zero without adding Fe, a third step of forming a resistance layer on the buffer layer by epitaxially growing AlGaInN where x, y, and z satisfy x+y+z=1 and y is not zero while adding Fe, a step of epitaxially growing a channel layer on the resistance layer, a step of epitaxially growing an electron supply layer above the channel layer, and a step of forming an electrode above the electron supply layer.

Method of manufacturing semiconductor element

A manufacturing method of a high electron mobility transistor includes: forming a GaN channel layer on a semi-insulating substrate in a first growth condition; forming a transition layer on the GaN channel layer while the first growth condition is changed to a second growth condition; and forming an AlGaN electron supply layer on the transition layer in the second growth condition, wherein the GaN channel layer, the transition layer, and the AlGaN electron supply layer are continuously formed without interrupting growth.

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Tokyo, Japan

Atsushi Era