Tokyo Electron Limited

Atsushi Endoh

Daisuke Suzuki

Kazuhide Hasebe

Keisuke Suzuki

Shingo Hishiya

Hirofumi Kaneko

Hisashi Inoue

Keishi Shionaga

A reaction tube for a semiconductor process for performing a heat process on a plurality of target objects stacked at intervals under a vacuum state is integrally made of an electrically insulating and heat-resistant material. The reaction tube includes a cylindrical sidewall that has a load port at a lower end for loading and unloading the target objects to and from the reaction tube, and a circular ceiling wall that closes an upper end of the sidewall and has a flat inner surface extending in a direction perpendicular to an axial direction of the sidewall. The ceiling wall has an annular groove formed in a peripheral region of an outer surface along the sidewall.

Reaction tube and heat processing apparatus for a semiconductor process

A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.

Method and apparatus for forming silicon oxide film

Growing community of inventors

Nirasaki, Japan

Atsushi Endoh