Tokyo Electron Limited

Toyo Ink Manufacturing Company

Sony Corporation

Horiba, Ltd.

Toyo Ink Mfg. Co., Ltd.

Tokyo Bell Seisakusho Co., Ltd.

Atsushi Endo

Hirofumi Kaneko

Harumi Kawamura

Shigeru Nakajima

Akinobu Kakimoto

Takeshi Kumagai

Akimitsu Mochizuki

Hitoshi Kato

Daisuke Suzuki

Kazuhide Hasebe

Yutaka Takahashi

Satoshi Takagi

Kohei Fukushima

Yutaka Motoyama

Tatsuo Nishita

Hisashi Inoue

Michichika Hikosaka

Takahiro Miyahara

Tsutomu Fujigamori

Kazumasa Igarashi

Satoshi Mizunaga

Takehiro Otsuka

Yoichiro Chiba

Yasumasa Suda

Chihhsiang Hsiao

Akira Inoue

Kazuo Yamamoto

Tsuyoshi Moriya

Satoshi Tanaka

Mitsuhiro Okada

Takeshi Sato

Hiraku Inoue

Hiroshi Yano

Kazuharu Seki

Nobutake Nodera

Masaru Sugimoto

Shinji Miyazaki

Masakazu Minami

Yuichiro Morozumi

Toshiharu Nishimura

Katsushige Harada

Kazumi Kubo

Masanobu Igeta

Katsumi Nishimura

Haruhiko Furuya

Yusuke Suzuki

Kazuo Yabe

Yoshiyuki Fujita

Masayuki Hasegawa

Tomonori Fujiwara

Hiroki Iriuda

Dong-Kyun Choi

Atsushi Tsuboi

Kyoji Ichimura

Shimpei Yamaguchi

Tadashi Itabashi

Makoto Umeki

Yasushi Kodashima

Makoto Yoshida

Shogo Tsukazawa

Masafumi Ishida

Masami Kuwabara

A film forming method is provided. In the film forming method, a mask is prepared based on a measurement result of a surface state of a substrate. The mask is transferred into a process chamber and the substrate is transferred into the process chamber. Then, a film is formed on a back surface of the substrate while the mask is disposed onto the back surface of the substrate.

Film forming method and semiconductor production apparatus

A method for manufacturing a semiconductor device includes supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess, supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess, supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess, and additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas.

Method for manufacturing semiconductor device and substrate processing apparatus

A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a plurality of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container, disposed symmetrically with respect to a straight line connecting a center of the processing container and a center of the exhaust slit, and each configured to eject a same processing gas into the processing container.

Processing apparatus and processing method

A method for manufacturing a semiconductor device includes forming a support on a side surface of a stack that extends from a substrate. The stack includes a second sacrificial film, plural first sacrificial films and plural silicon (Si)-containing films, wherein one first sacrificial film of the plural sacrificial films is stacked upon the second sacrificial film and the plural sacrificial films and the plural Si-containing films are alternately stacked upon one another, and at least a side of the second sacrificial film is not covered by the support, the one first sacrificial film and the substrate. The method further includes removing the second sacrificial film from the stack to form a space between the substrate and the one first sacrificial film and adjacent to the support, and filling the space with a dielectric film.

Fabrication process flow of dielectric layer for isolation of nano-sheet devices on bulk silicon substrate

There is provided a method of forming a polysilicon film, which includes: forming an amorphous silicon film on a substrate; forming a cap layer, which is formed of an amorphous germanium film or an amorphous silicon germanium film, on the amorphous silicon film; forming crystal nuclei of a silicon in the amorphous silicon film by heating the substrate at a first temperature; removing the cap layer after the crystal nuclei are formed; and growing the crystal nuclei by heating the substrate from which the cap layer is removed, at a second temperature equal to or higher than the first temperature.

Method of forming polysilicon film and film forming apparatus

A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.

Method for forming a protective film

A protective film forming method is provided. In the method, an oxide film of either an organic metal compound or an organic metalloid compound is deposited on a flat surface region between adjacent recessed shapes formed in a surface of a substrate. Then, a lateral portion of the oxide film deposited on the flat surface region is removed by etching.

Protective film forming method

There is provided a method of filling a recess with a germanium-based film composed of germanium or silicon germanium in a substrate to be processed on which an insulating film having the recess formed therein is formed, the method including: forming a silicon film on a surface of the insulating film at a thickness as not to completely fill the recess; subsequently, etching the silicon film such that the silicon film remains only in a bottom portion of the recess; and subsequently, selectively growing the germanium-based film composed of germanium or silicon germanium on the silicon film remaining in the bottom portion of the recess and selectively filling the recess with the germanium-based film.

Recess filling method and processing apparatus

A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

Thin film forming method

A method of operating a film forming apparatus includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container and performing a cleaning process with a cleaning gas to remove an unnecessary carbon film adhered on a inside of the processing container, wherein the method further includes, before the forming of the carbon film, forming, on a surface of a member contacting a processing space in the processing container, a tolerant pre-coating film which has a tolerance to the cleaning gas and improves adhesion of the carbon film to the surface of the member. Accordingly, the adhesion of the carbon film is improved, and further, the tolerant pre-coating film remains even when the cleaning process of removing the unnecessary carbon film is performed.

Film forming apparatus and method of operating the same

A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.

Thin film forming method and film forming apparatus

Provided is a method of operating a film forming apparatus capable of suppressing generation of particles by improving an adhesion of a carbon film to surfaces of members which are formed of a quartz material and contact a processing space in a processing container. The method includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container formed of a quartz material, wherein the method further includes forming an adhesion film to improve the adhesion of the carbon film, on surfaces of members which are formed of a quartz material and contact a processing space in the processing container. Accordingly, the adhesion of the carbon film to the surface of the member formed of a quartz material contacting the processing space in the processing container is improved, thereby suppressing generation of particles.

Outer tube for process tube for manufacturing semiconductor wafers

Inner tube for process tube for manufacturing semiconductor wafers

Growing community of inventors

Nirasaki, Japan

Atsushi Endo