Mitsubishi Electric Corporation

Atsuro Hama

Hiroaki Morikawa

Hirohisa Nishino

Yuichiro Hosokawa

Hayato Kohata

Norihiro Tamura

Yukiko Nakazawa

A solar cell manufacturing method includes a step of forming a diffusion layer including a first section and a second section on a light-receiving side of a semiconductor substrate, where the first section has a first concentration of impurities, and the second section has a second concentration of the impurities that is higher than the first concentration, a step of irradiating the diffusion layer with detection light that is reflected at a higher reflectivity on the first section than on the second section, and a step of detecting the first section that corresponds to a first reflectivity, and the second section that corresponds to a second reflectivity that is lower than the first reflectivity in the diffusion layer on the basis of a difference in reflectivity of the detection light reflected off the respective sections of the diffusion layer.

Solar cell manufacturing method

A solar cell includes: a first-conductivity-type semiconductor substrate that includes an impurity diffusion layer on one surface side, which is a light receiving surface side, the impurity diffusion layer having a second-conductivity-type impurity element diffused therein; a plurality of linear light-receiving-surface-side electrodes that are a paste electrode that has a multi-layered structure, is formed by multi-layer printing of an electrode material paste on the one surface side, and is electrically connected to the impurity diffusion layer and that extend in parallel in a specific direction in a plane direction of the semiconductor substrate; and a back-surface-side electrode that is formed on another surface side of the semiconductor substrate. In the light-receiving-surface-side electrodes, the light-receiving-surface-side electrodes get smaller in width as they get closer in a width direction of the light-receiving-surface-side electrodes to a specific reference position.

Solar cell, manufacturing method thereof, and solar cell module

A plasma deposition apparatus that includes a high-frequency electrode caused to face a deposition target and a ground electrode connected to the deposition target, and deposits a film on the deposition target by using plasma generated between the high-frequency electrode and the ground electrode, wherein the high-frequency electrode includes a first high-frequency electrode caused to face a first deposition target surface of the deposition target, and a second high-frequency electrode caused to face a second deposition target surface on the opposite side of the first deposition target surface, and the first high-frequency electrode, the second high-frequency electrode, and the ground electrode generate plasma between the first high-frequency electrode and the ground electrode for performing deposition on the first deposition target surface and plasma between the second high-frequency electrode and the ground electrode for performing deposition on the second deposition target surface at the same time.

Plasma deposition apparatus and plasma deposition method

Forming an impurity diffusion layer of the second conductivity type and an antireflective film on one surface side of a semiconductor substrate of the first conductivity type; applying the first electrode material onto the antireflective film; forming a passivation film on the other surface side of the semiconductor substrate; forming openings in the passivation film to reach the other surface side; applying a second electrode material containing impurity elements of the first conductive type to fill the openings and not to be in contact with the second electrode material of adjacent openings; applying a third electrode material onto the passivation film to be in contact with the entire second electrode material; forming at a time, by heating the semiconductor substrate at a predetermined temperature after applying the first electrode material and the third electrode material, the first electrodes, a high-concentration region, and the second electrodes and third electrode.

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Tokyo, Japan

Atsuro Hama