Hitachi, Ltd.

Denso Corporation

Other

Hitachi Car Engineering Co., Ltd.

Denso Corpora Tion

Atsuo Watanabe

Takahide Ikeda

Takasumi Ohyanagi

Takahiro Nagano

Mitsuru Hirao

Masatsugu Amishiro

Tsuyoshi Yamamoto

Atsushi Hiraishi

Touji Mukai

Masataka Minami

Mutsumi Kikuchi

Fumio Murabayashi

Takashi Sase

Toshiyuki Morishita

Tatsuya Kamei

Kazushige Sato

Hiroki Nakamura

Naohiro Momma

Kiyoshi Tsukuda

Katsumi Ogiue

Masanori Odaka

Yasuyuki Kojima

Kenji Tabuchi

Minehiro Nemoto

Nobuo Tamba

Nobuyasu Kanekawa

Satoshi Shimada

Osamu Saito

Junichi Horie

Shinichiro Mitani

Yoshiaki Yazawa

Toshio Sakakibara

Akira Fukami

Hidekatsu Onose

Rajesh Kumar Malhan

Yasuo Onose

Takayuki Iwasaki

Seigoh Yukutake

Masayuki Ohayashi

Katsuhiro Furukawa

Chiyoshi Kamada

Seiji Kuryu

Takayuki Oouchi

Kouichirou Yamada

Tadashi Kuramoto

Shoji Shukuri

Tsutomu Yatsuo

Rajesh Kumar

Takashi Nishida

Katsuaki Saito

Shinya Satou

Kazuo Yano

Kazuo Tanaka

Masahiro Iwamura

Mutsuhiro Mori

Ryuichi Saito

Mitsuru Hiraki

Hideo Maejima

Masaki Shiraishi

Nobuo Owada

Akihiro Miyauchi

Kazutaka Mori

Takashi Akioka

Katsumi Ishikawa

Norio Ishitsuka

Atsushi Miyazaki

Masahiro Ito

Keiichi Yoshizumi

Kenichi Kikushima

Mitsuaki Horiuchi

Shuji Katoh

Satoru Isomura

Norio Ichikawa

Masahiro Okamura

Kozo Sakamoto

Masaya Iida

Yutaka Sato

Toshiyuki Kikuchi

Mitsutoshi Honda

Yoshiteru Shimizu

Toshiro Hiramoto

Masayoshi Naito

Akihiko Saito

Masami Usami

Hideo Homma

Yusuke Takeuchi

Ryuichi Izawa

Yoshiaki Yuyama

Yosuke Inoue

Seigo Yukutake

Shinichi Kurita

Kouichi Seki

Toru Koizumi

Koki Sakai

Shinichi Tanabe

Toshihito Tabata

Takayuki Iwasakii

Hidekazu Kamioka

Takasumi Ooyanagi

In a high breakdown voltage semiconductor element among elements integrated together on an SOI substrate in which its rated voltage is shared between an embedded oxide layer and a drain region formed by an element active layer, both high integration and high breakdown voltage are realized while also securing suitability for practical implementation and practical use. The high breakdown voltage is realized without hampering size reduction of the element by forming an electrically floating layer of a conductivity type opposite to that of the drain region at the surface of the drain region. Further, the thickness of the embedded oxide layer is reduced to a level suitable for the practical implementation and practical use by setting the thickness of the element active layer of the SOI substrate at 30 &#x3bc;m or more.

High breakdown voltage semiconductor circuit device

A dielectrically isolated semiconductor device of high reliability is provided by realizing a fine and deep element isolating region which can prevent dislocation of an oxide film as an insulation layer by oxidation-induced stress. The dielectrically isolated semiconductor device includes an SOI substrate supporting an active element layer deeper than an expanded distance of a depletion layer subjected to the highest voltage applied to the device, and an element isolating region which encloses the active element layer. The element isolating region contains a deep trench which comes into contact with the insulation layer, and which is filled with n heavily doped layers on both side walls, second insulation films each adjacent to the n heavily doped layer and a polycrystalline semiconductor layer formed between the second insulation films.

Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof

A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.

SIC semiconductor device and method for manufacturing the same

A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

Method for manufacturing silicon carbide semiconductor device

A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.

Interface device and information processing system

A semiconductor device includes a vertical field-effect transistor having a substrate of first conduction type in a substrate base, a drain electrode formed on a first surface of the substrate, an epitaxial layer of first conduction type formed on a second surface of the substrate, a source region of first conduction type formed on the semiconductor base, a source ohmic contact metal film in ohmic contact with the source region, trenches formed from the second surface of the semiconductor base, and a gate region of second conduction type formed along the trenches. The semiconductor device further includes a gate rise metal film in ohmic contact with the draw-out layer of the gate region on the bottom of the trenches and rising to the second surface of the semiconductor base, and a gate draw-out metal film connected to the gate rise metal film from the second surface of the semiconductor base.

Semiconductor device

A communication system is provided including a transceiver and an application controller to transmit and receive signals through the transceiver. An isolator which insulates and separates the transceiver and application controller includes primary and secondary side circuits insulated from each other on a substrate and a capacitive insulating means to transfer signals between the primary and second sides while insulating and separating the primary side circuit from the secondary side circuit.

Isolator and a modem device using the isolator

Silicon carbide semiconductor device and method for manufacturing the same

A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.

Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove

A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor, control regions of a second conductivity type formed respectively along the first trenches, a source region of the first conductivity type formed along the second surface of the semiconductor between the first trenches, a source electrode joined to the source region, and a gate electrode adjacent to the control regions, (b) a pair of second trenches formed from the second surface of the semiconductor independently of the field effect transistor, (c) control regions of the second conductivity type formed along the second trenches, and (d) a diode having a junction formed on the second surface between the second trenches.

Semiconductor device including a vertical field effect transistor, having trenches, and a diode

A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a pgate and a gate electrode is formed on the bottom of the first region, the structure is built such that the pgate and an nsource are contiguous. An insulating film is formed on the surface of an nchannel, and an auxiliary gate electrode is formed on the insulating film. In addition, the auxiliary gate electrode and the source electrode are shorted.

Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each groove

Growing community of inventors

Hitachiota, Japan

Atsuo Watanabe