Fujitsu Corporation

Fujitsu Semiconductor Limited

Atsuo Shimizu

Tamotsu Owada

Kengo Inoue

Hirofumi Watatani

Shun-ichi Fukuyama

Shun-ichi Furuyama

Hirofumi Watantani

A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of Oto bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device

A semiconductor device including an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of Oto bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

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Kawasaki, Japan

Atsuo Shimizu