Shin-etsu Chemical Co., Ltd.

Asahi Kasei Microdevices Corporation

Shin-etsu Chemical C O., Ltd.

Atsuo Ito

Shoji Akiyama

Makoto Kawai

Yoshihiro Kubota

Yuuji Tobisaka

Koichi Tanaka

Kouichi Tanaka

Yuji Tobisaka

Tomoyoshi Furihata

Hiroshi Tamura

Atsushi Yaginuma

Yoshihiro Nojima

Naoki Yamakawa

Junichi Tsukada

Hiroto Ohwada

Kiyoshi Mitani

Minoru Igarashi

Sumio Sekiyama

Hyung Bae Kim

Tsutomu Nakamura

Kenichi Sato

Masahiro Furuya

Hyung-Bae Kim

Yoshihiro Kuboto

A switch apparatus is provided, including: a main switch connected between first and second terminals, and electrically connecting or disconnecting the first and second terminals according to gate voltage applied to a gate terminal; a voltage output unit having a voltage divider including a first voltage-division resistance on the first terminal side and a second voltage-division resistance on the second terminal side, and outputting voltage corresponding to voltage of the first terminal and voltage of the second terminal if the main switch is caused to enter a connected state; a buffer outputting voltage following output voltage of the voltage output unit in a connected state of the main switch; and a switch control circuit supplying first voltage corresponding to output voltage of the buffer to the gate terminal, and supplying a second voltage corresponding to output voltage of the buffer to a bulk terminal of the main switch.

Switch apparatus

A method of manufacturing a solar cell module comprising pressing a first silicone gel sheet provided on a sunlight receiving surface of a solar cell string and a second silicone gel sheet provided on an opposite side sunlight non-receiving surface of the solar cell string in vacuum to encapsulate the solar cell string with the first and second silicone gel sheets; disposing the sunlight receiving surface side of the first silicone gel sheet on one surface of a transparent light receiving panel and disposing butyl rubber in a picture frame-like shape along an outer peripheral portion of a panel where the first silicone gel sheet is not formed and laying the light receiving panel and the light non-receiving panel or back sheet over each other with the silicone gel sheet-encapsulated solar cell string on the inside, and pressing them at 100 to 150&#xb0; C. in vacuum to press bond the light receiving surface panel and the light non-receiving surface panel or back sheet to each other through the butyl rubber.

Method of manufacturing solar cell module

A method of manufacturing a solar cell module comprising adhering a first silicone gel sheet to one surface of a transparent light receiving panel to be a sunlight incidence surface; adhering a second silicone gel sheet to one surface of a light non-receiving panel or back sheet on the side opposite to the sunlight incidence surface; disposing a solar cell string on the first silicone gel sheet of the light receiving panel, and disposing butyl rubber in a picture frame-like shape along an outer peripheral region of a panel where either of the silicone gel sheets are not formed; and laying the light receiving panel and the light non-receiving panel or back sheet over each other with the silicone gel sheets on the inside, and pressing them at 100 to 150&#xb0; C. in vacuum to encapsulate the solar cell string with the silicone gel sheets and press bond the light receiving panel and the light non-receiving panel or back sheet to each other through the butyl rubber.

A solar cell module is manufactured by encapsulating a solar cell matrix comprising a plurality of electrically connected solar cell components between a transparent panel and a backsheet with a resin. The method involves (i) embossing opposite surfaces of a green silicone rubber sheet, (ii) arranging a transparent panel (), silicone rubber sheet (), solar cell matrix (), silicone rubber sheet (), and backsheet () to form a multilayer assembly, and (iii) heating and compressing the assembly for vacuum lamination for establishing a seal around the solar cell matrix.

Manufacture of solar cell module

A bonded SOS substrate having a semiconductor film on or above a surface of a sapphire substrate is obtained by a method with the steps of implanting ions from a surface of a semiconductor substrate to form an ion-implanted layer; activating at least a surface from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of 50&#xb0; C. to 350&#xb0; C.; heating the bonded substrates at a maximum temperature from 200&#xb0; C. to 350&#xb0; C. to form a bonded body; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate for embrittling an interface of the ion-implanted layer, while keeping the bonded body at a temperature higher than the temperature at which the surfaces of the semiconductor substrate and the sapphire substrate were bonded.

SOS substrate having low defect density in vicinity of interface

Method of making a bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50&#xb0; C. to 350&#xb0; C.; heating the bonded substrates at a maximum temperature of from 200&#xb0; C. to 350&#xb0; C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate.

SOS substrate having low surface defect density

There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.

Method for reducing the thickness of an SOI layer

A method of manufacturing a laminated wafer is provided by forming a silicon film layer on a surface of an insulating substrate comprising the steps in the following order of: applying a surface activation treatment to both a surface of a silicon wafer or a silicon wafer to which an oxide film is layered and a surface of the insulating substrate followed by laminating in an atmosphere of temperature exceeding 50&#xb0; C. and lower than 300&#xb0; C., applying a heat treatment to a laminated wafer at a temperature of 200&#xb0; C. to 350&#xb0; C., and thinning the silicon wafer by a combination of grinding, etching and polishing to form a silicon film layer.

Method of manufacturing laminated wafer by high temperature laminating method

A method of manufacturing a laminated substrate is provided. The method includes: forming an oxide film on at least a surface of a first substrate having a hardness of equal to or more than 150 GPa in Young's modulus, and then smoothing the oxide film; implanting hydrogen ions or rare gas ions, or mixed gas ions thereof from a surface of a second substrate to form an ion-implanted layer inside the substrate, laminating the first substrate and the second substrate through at least the oxide film, and then detaching the second substrate in the ion-implanted layer to form a laminated substrate; heat-treating the laminated substrate and diffusing outwardly the oxide film.

Process for producing laminated substrate and laminated substrate

In a manufacturing method for manufacturing a silicon on insulator (SOI) wafer, an ion injection layer is formed within the wafer, by injecting a hydrogen ion or a rare gas ion from a surface of the single crystal silicon wafer, the ion injection surface of the single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone, the ion injection surface of the single crystal silicon wafer is bonded to the surface of the transparent insulation substrate, by bringing them into close contact with each other at room temperature, with the processed surface(s) as bonding surface(s), and an SOI layer is formed on the transparent insulation substrate, by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer.

Silicon on insulator (SOI) wafer and process for producing same

Disclosed is a millable type silicone rubber composition including as an essential components:

Silicone rubber composition for optical sheet, and optical sheet

There is provided a method for manufacturing an SOI substrate capable of effectively and efficiently embrittling an interface of an ion-implanted layer without causing the separation of a bonded surfaceor the breakage of a bonded wafer. Provided is a method for manufacturing an SOI substrateby forming an SOI layeron a surface of a transparent insulating substrate, the method comprising, in the following order, implanting ions into a silicon waferor a silicon waferwith an oxide filmfrom a surface thereof so as to form an ion-implanted layer; subjecting at least one of the surface of the transparent insulating substrate and the surface of the ion-implanted silicon wafer or the silicon wafer with an oxide film to a surface activation treatment; bonding together the silicon waferor the silicon waferwith an oxide filmand the transparent insulating substrate; subjecting the bonded wafer to a heat treatment at 150&#xb0; C. or higher but not higher than 350&#xb0; C. so as to obtain a laminate; and irradiating visible light at a side of the transparent insulating substrateof the laminatetoward the ion-implanted layerof the silicon waferor the silicon waferwith an oxide filmto embrittle an interface of the ion-implanted layerand transfer a silicon thin film to the transparent insulating substrateso that the SOI layercan be formed.

Method for fabricating SOI substrate

To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated waferby forming a silicon film layer on a surfaceof an insulating substratecomprising the steps in the following order of: applying a surface activation treatment to both a surfaceof a silicon waferor a silicon waferto which an oxide film is layered and a surfaceof the insulating substratefollowed by laminating in an atmosphere of temperature exceeding 50&#xb0; C. and lower than 300&#xb0; C., applying a heat treatment to a laminated waferat a temperature of 200&#xb0; C. to 350&#xb0; C., and thinning the silicon waferby a combination of grinding, etching and polishing to form a silicon film layer.

A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.

Method for producing SOI substrate

Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900&#xb0; C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.

Growing community of inventors

Gunma, Japan

Atsuo Ito