Toyoda Gosei Co., Ltd.

Tridonic Optoelectronics Gmbh

Litec Gbr

Leuchstoffwerk Breitungen Gmbh

Other

Aisin Seiki Kabushiki Kaisha

Atsuo Hirano

Koichi Ota

Toshiya Uemura

Tetsushi Hiramitsu

Walter Tews

Gundula Roth

Detlef Starick

Peter Pachler

Stefan Tasch

Wolfgang Kempfert

Akihito Ota

Satoshi Ono

Naohisa Nagasaka

Yuji Takahashi

Takemasa Yasukawa

Yukio Yoshikawa

Kiyotaka Teshima

Naoki Shibata

Yoshinobu Suehiro

Masumi Nishikawa

Masanobu Ishikawa

Tetsu Kachi

Chikahisa Hayashi

Shuji Inui

Shigemi Horiuchi

Kunihiro Hadame

Satoshi Ohno

Takanori Kantoh

Masaki Hashimura

Katsunori Arakane

Tatsuya Takashima

Zenzaburo Murase

Yoshinobu Yamanouchi

Kenichi Koya

Hiroshi Tadano

Hideki Hosokawa

Hitomi Kawano

Shigeru Fukumoto

Kunihiko Obara

Toshihide Maeda

Hiromi Kitahara

The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different lights with wavelengths other than those of the absorbed lights. The phosphor is made of alkaline earth metal silicate fluorescent material activated with europium.

Light emitting device

Light emitting device having a divalent-europium-activated alkaline earth metal orthosilicate phosphor

The present invention provides a Group III nitride compound semiconductor device in which the amount of a current allowed to be applied on a p-type pad electrode can be increased. That is, in the Group III nitride compound semiconductor device according to the present invention, a portion of a translucent electrode coming in contact with a circumferential surface of the p-type pad electrode is formed as a thick port ion to thereby increase the area of contact between the circumferential surface and the translucent electrode to thereby increase the current allowed to be applied on the p-type pad electrode. In addition, the use of the thick portion prevents cracking from occuring between the translucent electrode and the circumferential surface of the pad electrode.

Group III nitride compound semiconductor device

An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained. That is, in the present invention, in a device having an outermost diameter of not smaller than 700 &#x3bc;m, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 &#x3bc;m.

A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

Light-emitting device using a group III nitride compound semiconductor and a method of manufacture

Light emitting device having phosphor of alkaline earth metal silicate

In a light emitting diode, a blue light emitting element is mounted on a base having a cup through a phosphor-containing mount so that the light emitting element is located within the cup and is mounted on the bottom of the cup through the phosphor-containing mount. The light emitting diode includes a light emitting element and a p electrode. By virtue of the above construction, blue light emitted from the light emitting element can be reflected from the lower surface of the p electrode without being radiated directly from the upper surface of the light emitting element to the outside of the light emitting diode. As a result, the blue light emitted from the light emitting element can be efficiently mixed with yellow light given off from the phosphor in the phosphor-containing mount to provide white light which is radiated to the outside of the light emitting diode with high efficiency. The white light can be perceived by a viewer to be uniformly radiated from the light radiating surface of the light emitting diode.

Light emitting diode

In a light emitting diode, a scattering material-containing light guiding/scattering layer is provided which directly receives light emitted from a light emitting element. The scattering material contained in the light guiding/scattering layer irregularly reflects and scatters the incident light. The scattered light is led to a fluorescence emitting layer formed of a transparent binder containing a phosphor material. The probability of incidence of light having high optical density, which has been emitted from the light emitting element, directly to the phosphor material contained in the fluorescence emitting layer is lowered, and light can be radiated from the whole fluorescence emitting layer. Therefore, uniform light having a desired color can be radiated with high efficiency from the light emitting diode.

Group-III nitride compound semiconductor device

In a light-emitting diode, a substantially square flip chip is placed on a substantially square sub-mount at a position and posture which are obtained through superposition of a center point and center axis of the flip chip on a center point and center axis of the sub-mount and subsequent rotation of the flip chip about the center points by approximately 45&deg;. Therefore, triangular exposed regions are formed on the sub-mount, in which two lead electrodes for the flip chip can be formed. As a result, the flip chip can be placed on a lead frame such that the center axis of the flip chip coincides with the center axis of a parabola of the lead frame. Further, the sub-mount is formed of a semiconductor substrate, and a diode for over-voltage protection is formed within the semiconductor substrate. Therefore, breakage of the light-emitting diode due to excessive voltage can be prevented.

Light-emitting diode

A wafer is diced up to a depth of 15 .mu.m from the surface of a sapphire substrate along a dicing line set in the center of a processed region between electrodes for respective devices by using a blade having a width narrower than the width of the processed region, so that separation grooves are formed. In the present invention, the first contact layer, the second contact layer, the p layer, the light-emitting layer and the n layer are arranged in a region between a side surface of the blade and a side wall of the electrode formation region. Accordingly, stress is concentrated into an intersection line of the electrode formation region and the side wall which is erected so as to be L-shaped. Thus, cracks generated at the time of dicing are formed-toward the intersection line. As a result, the cracks never enter into the electrode formation region and, accordingly, never enter into the lower portion of the electrode. Accordingly, the current path for the electrode is prevented from being disturbed by the cracks.

Method for separating a substrate of a group III nitride semiconductor

A relay mechanism for a steering wheel comprising a plurality of slip rings disposed isolated from each other in a circular track having a steering shaft as its center, and sliders, one provided at each slip ring. It further includes an arcuate common line slip ring extending so as to have a predetermined central angle, and a common line slider sliding on the common line slip ring with the steering shaft as its center, the common line slider being positioned at the midpoint of the common slip ring when the steering wheel is at its straight travel position. When the steering wheel is turned over more than a predetermined angle from its travel position, the common line connecting the slip rings and a power source is rendered non-conductive thereby to disable the signal transmission between the slip rings and electric devices.

Relay mechanism for a steering wheel

The steering wheel comprises a column section, a steering shaft passing through the column section, a boss portion secured to the top of the steering shaft, a boss plate secured on the boss portion, a pad section, a plurality of sun gears of the helical gear type, a plurality of planetary shafts, a plurality of pairs of planetary gears of the helical gear type attached to either end portion each of the respective planetary shafts and gearing with the corresponding sun gears, and a resilient member for urging the planetary gears of a pair mounted on at least one of the plural planetary shafts. At least one of the paired planetary gears is attached movably in the longitudinal direction of the axis of that planetary shaft, so that these planetary gears approach mutually or separate from each other in the axial direction of the respective planetary shaft.

Steering wheel

Growing community of inventors

Aichi-ken, Japan

Atsuo Hirano