Renesas Electronics Corporation

Elpida Memory, Inc.

Nec Corporation

Nec Electronics Corporation

Atsunori Hirobe

Muneaki Matsushige

Tetsuo Fukushi

Toshikatsu Jinbo

Kazutaka Kikuchi

Toru Ishikawa

Kyoichi Nagata

Kyouichi Nagata

A technique is provided which can facilitate management of data in a memory device in a semiconductor device including the memory device and a data processing device. The semiconductor device includes a first external terminal, a second external terminal, a data processing device, and a memory device. The semiconductor device further includes a first bus coupled between the data processing device and the memory device, a second bus coupled between the data processing device and the second external terminal, a third bus coupled to the first external terminal, and a control circuit coupled to the first bus and the third bus. The control circuit has a management function of the memory device using the third bus.

Semiconductor device and data processing system

A semiconductor storage device includes: a plurality of memory cell arrays; a plurality of bidirectional data buses provided in correspondence with respective ones of the plurality of memory cell arrays; a plurality of bidirectional buffer circuits, which are provided in correspondence with respective ones of the memory cell arrays, capable of connecting adjacent bidirectional data buses serially so as to relay data in the bidirectional data buses; and a control circuit for controlling activation of the bidirectional buffer circuits. The bidirectional buffer circuit is arranged so as to invert logic and the bidirectional buffer circuit is arranged so as not to invert logic.

Semiconductor storage device

A semiconductor device includes a memory cell array including a plurality of memory array basic units. A first bus for transfer of address/control signals, includes a first buffer circuit operating as a pipeline register. A second bus for bidirectional transfer of write/read data, includes a second buffer circuit operating as a pipeline register. A first control circuit sequentially sends the address/control signals on the first bus, and a second control circuit sequentially sends/receives write/read data on the second bus.

Pipeline-controlled semiconductor memory device with reduced power consumption and memory access time

A semiconductor device includes a first semiconductor chip located over a substrate; and a second semiconductor chip located over the first semiconductor chip, wherein the first semiconductor chip includes a first internal power supply generation circuit that generates a first internal power supply voltage supplied to a first internal circuit; a first penetration electrode formed from an upper surface of the first semiconductor chip to an underside of the first semiconductor chip and electrically connected to the first internal power supply generation circuit; a first reference voltage generation circuit that generates a first reference voltage; and a second penetration electrode formed from the upper surface of the first semiconductor chip to the underside of the first semiconductor chip and electrically connected to the first reference voltage generation circuit.

Multilayered semiconductor device

An object of the invention is to make effective use of the structure of a multilayered semiconductor device that uses penetration electrodes in such a manner that the layered chips obtain stable internal power supply voltages with no increase in current consumption or in the area of the layered chips. Internal power supply generation circuits furnished in each of the layered core chips have their outputs commonly coupled via electrodes penetrating the layered core chips. This allows electrical charges to be shared among the core chips, optimizes internal power consumption of the multilayered semiconductor device as a whole, and inhibits fluctuations in the internal power supply voltages.

A semiconductor storage deviceaccording to an aspect includes a first memory areaand a second memory area. Memory cells MC_m_n and bit lines BL, BL_, . . . , BLmare disposed in a boundary areabetween the first and second memory areasand. The memory cells MC_m_n disposed in the boundary areaincludes memory cells into which no data is written, and a lineis formed in a place that overlaps memory cells disposed in the boundary areawhen the boundary areais viewed from the top. As a result, it is possible to increase the integration density of a memory cell array and provide a line in the memory cell array.

A semiconductor storage deviceaccording to an aspect includes a first memory areaand a second memory area. Memory cells MC_m_n and bit lines BL, BL_, . . . . , BLm_are disposed in a boundary areabetween the first and second memory areasand. The memory cells MC_m_n disposed in the boundary areaincludes memory cells into which no data is written, and a lineis formed in a place that overlaps memory cells disposed in the boundary areawhen the boundary areais viewed from the top. As a result, it is possible to increase the integration density of a memory cell array and provide a line in the memory cell array.

A semiconductor device includes a bidirectional first bus arranged in common for a plurality of memory array basic units transferring write data and read data, a second bus transferring address/command, a plurality of first buffer circuits receiving addresses/command transferred to the second bus, wherein a control delay for generating the address/command and preparing write data to the first bus for write access and an output delay for outputting read data are both set to a length greater than or equal to a selection time for writing or reading of data to a memory cell of a selected area.

Semiconductor device

A semiconductor device of the present invention comprises a first step-down voltage circuit to generate a first step-down voltage lower than an externally-supplied power supply voltage, and a second step-down voltage circuit to generate a second step-down voltage lower than the first step-down voltage. The first step-down voltage circuit has a withstand voltage no lower than the power supply voltage and the second step-down voltage circuit has a withstand voltage no lower than the first step-down voltage.

Semiconductor device and memory

A step-down circuit is connected between a power supply node for supplying a supply voltage and an internal power supply line for supplying a power to the object circuit and steps-down the supply voltage, and supplies the stepped-down voltage to the object circuit through the internal power supply line. The step-down circuit includes a comparison circuit that compares a reference voltage with the voltage of the internal power supply line, and a driver that adjusts a current flowing between the internal power supply line and the power supply node according to the comparison result of the comparison circuit. The activity level of the driver is controlled so as to rise in a predetermined rising period synchronously with an activated operation of the object circuit and to fall in a predetermined falling period that comes after the rising period.

Step-down circuit, semiconductor device, and step-down circuit controlling method

A write amplifier power generating circuit includes a control unit for changing an output voltage. In a first write cycle in which a pair of bit lines are being amplified, a write operation is performed by an overdrive write method in which a high level from a write amplifier is set to a first voltage (for example, a power supply voltage). In a second write cycle after amplification in the pair of the bit lines has been completed, a write operation is performed by a write method in which the high level from the write amplifier is set to a second voltage (for example, an internal voltage).

Overdrive write method, write amplifier power generating circuit, and semiconductor memory device including the same

A delay circuit has a circuit structure dominated by an NMOS or a PMOS transistor. The delay circuit is supplied with, as a power supply voltage, an output voltage of a power supply voltage step-down circuit having a level generating circuit for generating a reference voltage obtained by an offset voltage and a manufacturing variation dependent voltage, and an m-time voltage generating circuit. A semiconductor device includes the delay circuit.

Power supply voltage step-down circuit, delay circuit, and semiconductor device having the delay circuit

An internal power supply generating circuit has a control circuit for controlling a control node voltage of a driver circuit thereof. During an overdrive duration, the control node voltage is set at an appropriate level of an operation range by controlling the control node voltage by the control circuit. By setting the control node voltage at the appropriate level, the internal power supply generating circuit can supply an internal power-supply voltage without a dead band after the overdrive duration. With this structure, the internal power supply generating circuit without the dead band can be obtained and a semiconductor device operable at a high speed comprising the internal power supply generating circuit can be obtained.

Growing community of inventors

Kanagawa, Japan

Atsunori Hirobe