Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaihsa Toshiba

Atsuko Sakata

Masayuki Kitamura

Satoshi Wakatsuki

Junichi Wada

Takeshi Ishizaki

Akihiro Kajita

Masahiko Hasunuma

Makoto Wada

Kei Watanabe

Daisuke Ikeno

Tomio Katata

Tadashi Sakai

Kazuyuki Higashi

Katsuya Okumura

Hisashi Kaneko

Nobuo Hayasaka

Yuichi Yamazaki

Shinichi Nakao

Hiroshi Toyoda

Masayuki Katagiri

Seiichi Omoto

Soichi Yamashita

Ryohei Kitao

Masaki Yamada

Ichiro Mizushima

Hideki Shibata

Naofumi Nakamura

Takamasa Usui

Tatsuro Saito

Masaaki Hatano

Yuya Matsubara

Kosuke Horibe

Kazuya Kinoshita

Yasuhito Yoshimizu

Naoshi Sakuma

Akifumi Gawase

Shinya Okuda

Hirotaka Ogihara

Tomotaka Ariga

Soichi Yamazaki

Shunsuke Ochiai

Kazuhito Furumoto

Hiroshi Tomita

Noriaki Matsunaga

Keiichi Sasaki

Hisashi Okuchi

Toshiyuki Sasaki

Atsunobu Isobayashi

Keisuke Kikutani

Yumi Hayashi

Hirotaka Nishino

Takeshi Iwasaki

Mitsuhiro Nakao

Jun-ichi Wada

Toshiaki Komukai

Yoshio Ozawa

Masayuki Tanaka

Kyoichi Suguro

Toshihiko Nagase

Koji Yamakawa

Yohei Sato

Seiji Inumiya

Koichi Watanabe

Hirokazu Ezawa

Mitsuhiro Omura

Hiroshi Itokawa

Yasuyuki Sonoda

Mitsuyoshi Endo

Kouji Matsuo

Hisao Miyazaki

Yusuke Oshiki

Akiko Nomachi

Hideto Matsuyama

Katsuyoshi Komatsu

Taishi Ishikura

Kengo Uchida

Hitomi Yamaguchi

Kazuhiro Katono

Naohsi Sakuma

Yuta Konno

Kohei Nagata

Takanori Usami

Hiroshi Nakazawa

A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the substrate by the plasma. The apparatus further includes a second film formed on a surface of the electrode and containing aluminum and fluorine or containing aluminum and oxygen.

Substrate processing apparatus and method of producing semiconductor device

A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas.

Film forming apparatus and film forming method

Provided is a semiconductor device of the embodiment including: an oxide semiconductor layer; a gate electrode; a first electrode electrically connected to one portion of the oxide semiconductor layer, the first electrode including a first region, second region, a third region, and a fourth region, the first region disposed between the first portion and the second region, the first region disposed between the third region and the fourth region, the first region containing at least one element of In, Zn, Sn or Cd, and oxygen, the second region containing at least one metal element of Ti, Ta, W, or Ru, the third region and the fourth region containing the at least one metal element and oxygen, the third region and the fourth region having an atomic concentration of oxygen higher than that of the second region; and a second electrode electrically connected to another portion of the oxide semiconductor layer.

Semiconductor device and semiconductor memory device

In one embodiment, a semiconductor device includes a substrate, and a plurality of insulating layers provided on the substrate. The device further includes a plurality of electrode layers provided on the substrate alternately with the plurality of insulating layers and including metal atoms and impurity atoms different from the metal atoms, lattice spacing between the metal atoms in the electrode layers being greater than lattice spacing between the metal atoms in an elemental substance of the metal atoms.

Semiconductor device and method of manufacturing the same

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800&#xb0; C. or higher and fluoride of a second metal element having a second boiling point of 800&#xb0; C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Method for manufacturing semiconductor device

A mask member contains tungsten (W), boron (B), and carbon (C). The mask member includes a first portion in contact with a process film, the first portion, in which the terms of the composition ratio, which correspond to boron and carbon, are larger than the term of the composition ratio, which corresponds to tungsten, and a second portion in which the term of the composition ratio, which corresponds to tungsten, is larger than the terms of the composition ratio, which correspond to carbon and boron.

Mask member and method for producing semiconductor device

A storage device according to embodiments includes a first conductive layer; a second conductive layer; a resistance change element provided between the first conductive layer and the second conductive layer; and an intermediate layer provided in any one of a position between the resistance change element and the first conductive layer and a position between the resistance change element and the second conductive layer, the intermediate layer containing at least one element of silicon (Si) and germanium (Ge), tellurium (Te), and aluminum (Al).

Storage device

According to one embodiment, a storage device includes a first conductive layer, a second conductive layer, a resistance-variable layer, between the first conductive layer and the second conductive layer, that includes germanium, antimony, and tellurium, a first layer, between the resistance-variable layer and the first conductive layer, that includes carbon, a second layer, between the resistance-variable layer and the second conductive layer, that includes carbon, a third layer, between the resistance-variable layer and the first layer, that includes at least one of tungsten nitride or tungsten carbide, and a fourth layer, between the resistance-variable layer and the second layer, that includes at least one of tungsten nitride or tungsten carbide.

A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.

Method of manufacturing semiconductor device and etching mask

According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

Method for manufacturing a semiconductor device

According to one embodiment, the semiconductor memory device includes a first electrode, a first material layer, including a first material, located on the first electrode, a second material, surrounded by the first material of the first material layer, including a phase change material, and a second electrode provided on the first material.

Semiconductor memory device having a phase change material

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Yokohama, Japan

Atsuko Sakata