Kioxia Corporation

Atsuko Saeki

Toshifumi Watanabe

Kenro Kubota

Shouichi Ozaki

Fumiya Watanabe

Kazuhiko Satou

Harumi Abe

Ryota Tsuchiya

A semiconductor memory device includes an output pin configured for connection with a memory controller, an output circuit configured to output through the output pin a voltage signal that changes over time in accordance with one or more bits of data to be output to the memory controller, and a control circuit configured to temporarily change a drive capability of the output circuit each time a voltage signal corresponding to one bit of the data is output through the output pin.

Semiconductor memory device having a control circuit for changing a drive capability of an output circuit of the semiconductor memory device

A semiconductor device includes a first pad, a second pad, a first output driver provided for the first pad and configured to output a first transmission signal to the first pad, a second output driver provided for the second pad and configured to output a second transmission signal to the second pad, a register that stores first and second calibration values, a first reference resistor for the first pad and having a resistance value that is set according to the first calibration value, a second reference resistor for the second pad and having a resistance value that is set according to the second calibration value, a first setting circuit configured to calibrate a resistance value of the first output driver using the first reference resistor, and a second setting circuit configured to calibrate a resistance value of the second output driver using the second reference resistor.

Semiconductor device

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Yokohama Kanagawa, Japan

Atsuko Saeki