Mitsubishi Electric Corporation

Atsuki Fujita

Katsuhiko Omae

Takanobu Kajihara

Takayuki Yamada

Takashi Nagao

Yuki Okabe

Masaru Fuku

Noriyuki Besshi

Yuya Muramatsu

Yutaro Sugi

Hiroaki Haruna

Kohei Yabuta

Tomohiro Inoue

Junya Suzuki

Shunsuke Fushie

Masayuki Funakoshi

Hiroyuki Miyanishi

Norio Emi

Masakazu Hamada

Ryosuke Takeshita

Tokiyoshi Tanigawa

A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

Power semiconductor device and substrate with dimple region

In a semiconductor device, on a heat dissipation portion of a lead frame opposite to a mounting portion on which a semiconductor element is mounted, a thin molding portion having a thickness of about 0.02 mm to 0.3 mm is formed by a second molding resin which is a high-heat-dissipation resin. A scale-like portion on which scale-shaped projections are consecutively formed is provided over both sides across a resin boundary portion of the heat dissipation portion. The scale-like portion reaches abutting surfaces of an upper die and a lower die of a mold used in a molding process. Thus, the same void inhibition effect as with an air vent is obtained.

Semiconductor device

Power semiconductor device and manufacturing method for power semiconductor device

A semiconductor device is provided with a heat dissipating face side skirt portion, which is a frame-form projection, on a heat dissipating face of a lead frame. Because of this, creepage distance increases with a small increase in an amount of resin, and insulating properties improve. Also, the heat dissipating face side skirt portion is molded via two transfer molding steps, wettability of the second molding resin with respect to a first molding resin and the lead frame increases, and adhesion improves. Furthermore, an end face of an inner lead is exposed in an element sealing portion on a mounting face side, and covered with a second thin molded portion molded using the second molding resin, whereby heat generated in a semiconductor element can efficiently be caused to escape from faces of both a first thin molded portion and the second thin molded portion, because of which heat dissipation improves.

Semiconductor device, and power conversion device including the semiconductor device

In a rotary electric machine in which a controller and a heat sink are arranged in an extending direction of an output shaft of a motor, in order to provide a rotary electric machine which secures a heat rejection performance and an insulation performance of a semiconductor device to be mounted to the controller and is downsized as a whole, the controller includes a semiconductor device having a drive circuit provided so as to correspond to a stator winding of the motor, and the semiconductor device has a main face held in close contact with the heat sink. On a close contact face between the semiconductor device and the heat sink, a drive circuit is formed so as to extend along an outer edge portion of the heat sink to increase a cooling area.

Rotary electric machine having heat sink for semiconductor device of controller

Growing community of inventors

Tokyo, Japan

Atsuki Fujita