Sharp Kabushiki Kaisha Corporation

Joled Inc.

Atsuhito Murai

Hideki Kitagawa

Hajime Imai

Yasuhiro Terai

Masanori Miura

Jiro Yamada

Eiichi Sato

Noriteru Maeda

Masahiko Kondo

Toshihiro Yanagi

Takuya Watanabe

Jun Nishimura

Takuji Miyamoto

Shinya Tanaka

Tetsuo Kikuchi

Yoshiharu Kataoka

Junya Shimada

Motohiro Toyota

Kazunori Morimoto

Mitsunori Imade

Ryosuke Ebihara

Keiichi Tanaka

Yoshihiro Okada

Takashi Maruyama

Atsushi Ban

Satoshi Horiuchi

Kozo Takahashi

Yuhko Hisada

Yoshihiro Oshima

Yasunobu Hiromasu

Yasuharu Shinokawa

Satoru Kishimoto

Hirokazu Yoshioka

Yoshitaka Okumoto

Yasutoshi Murakami

Kenji Maeda

Takayuki Shimada

Akiyoshi Fujii

Takeshi Hara

Yukinobu Nakata

Kohji Saitoh

Takashi Kurihara

Kazuyoshi Fujioka

Takehiro Murao

Masami Ozaki

Yutaka Sawayama

Masaki Uehata

Shinya Yamakawa

Takashi Sato

Koji Taniguchi

Shingo Kawashima

Seishi Kosegawa

Ryuji Miyama

Yukihiko Nishiyama

Noriko Matsuda

Hidetake Ogata

According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.

Display device having multiple protective films and wiring layer

A display unit includes a substrate including a pixel region including a plurality of pixels and a peripheral region. The display unit includes a plurality of first electrodes, wherein each of the plurality of first electrodes is in a corresponding pixel of the plurality of pixels. The display unit includes a second electrode opposed to the first electrode, wherein the second electrode is common for all of the plurality of pixels. The display unit includes an organic layer between the second electrode and the plurality of first electrodes, wherein the organic layer includes a light-emitting layer. The display unit includes a wiring layer between the substrate and the plurality of first electrodes. The display unit includes an auxiliary electrically-conductive layer including an organic electrically-conductive material, wherein the auxiliary electrically-conductive layer is electrically coupled to the second electrode. The auxiliary electrically-conductive layer is in a recess in the wiring layer.

Display unit

A display unit includes a substrate, a first electrode, a second electrode, an organic layer, and an auxiliary electrically-conductive layer. The substrate includes a pixel region including a plurality of pixels and a peripheral region outside the pixel region. The first electrode is provided for each of the plurality of pixels in the pixel region on the substrate. The second electrode is opposed to the first electrode, and is provided common for the plurality of pixels. The organic layer is provided between the second electrode and the first electrode, and includes a light-emitting layer. The auxiliary electrically-conductive layer includes an organic electrically-conductive material, and the auxiliary electrically-conductive layer is disposed in the pixel region on the substrate and is electrically coupled to the second electrode.

A display unit includes multiple pixels, a first electrode, a partition wall, a light emission layer, and a second electrode. The multiple pixels each have a light emission region and a non-light emission region along a first direction. The first electrode is provided in the light emission region in each of the multiple pixels. The partition wall is provided between each two of the pixels that are adjacent to each other in a second direction. The second direction intersects the first direction. The light emission layer covers the first electrode and is provided in the light emission region and the non-light emission region in a continuous manner. The second electrode faces the first electrode across the light emission layer.

Display unit and light emission unit

A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

A thin-film transistor substrate includes a pixel circuit, an interlayer insulating film, electrodes, and a hard mask metal. The pixel circuit includes a thin film transistor. The interlayer insulating film has contact holes and covers the pixel circuit. The electrodes are exposed above a surface of the interlayer insulating film, and electrically coupled to the pixel circuit via the contact holes. The hard mask metal has openings at portions facing the contact holes and is provided on the surface of the interlayer insulating film.

Thin-film transistor substrate and luminescent device

A display unit includes a display panel, a photochromic layer, and an ultraviolet absorption layer. The photochromic layer is configured to be colored by ultraviolet light and be decolored or color-faded by visible light. The display panel includes an image display surface with a plurality of pixels. The pixels are provided below the image display surface and each include an organic light-emitting layer.

Display unit including a photochromic layer and an ultraviolet absorption layer

A semiconductor device includes a substrate. The semiconductor device further includes a first transistor. The first transistor includes a first semiconductor layer over the substrate, the first semiconductor layer including poly-silicon. The first transistor further includes a first gate electrode over the first semiconductor layer, the first gate electrode facing the first semiconductor layer. The semiconductor device further includes a second transistor. The second transistor includes a second semiconductor layer over the substrate, the second semiconductor layer including an oxide semiconductor. The second transistor further includes a second gate electrode over the second semiconductor layer, the second gate electrode facing the second semiconductor layer.

Semiconductor device, method of manufacturing semiconductor device, and display unit

A display device includes a display region, an organic insulating layer, a display element, and a moisture-ingress barrier. The organic insulating layer has a groove outside the display region. The organic insulating layer extends over the display region and a region outside the groove. The display element is disposed in the display region and includes, in order, a first electrode, an organic layer, and a second electrode. The organic layer includes one or more moisture-reacting layers. The moisture-ingress barrier is disposed in the groove of the organic insulating layer, includes a material identical to the material of the one or more moisture-reacting layers, and has a thickness greater than the thickness of the one or more moisture-reacting layers.

Display device and method of manufacturing display device

According to one embodiment, a thin film transistor includes an oxide semiconductor layer provided above an insulating substrate and including a channel region between a source region and a drain region, a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region, a gate electrode provided on the first insulating film, a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal, a second protective film provided on the first protective film and a third protective film provided on the second protective film, as an insulating film containing a metal.

Thin film transistor and display device comprising the same

A display apparatus includes a display panel and a driving circuit. The display panel includes signal lines extending in a column direction, scanning lines extending in a row direction, and lead-out lines extending in the column direction. Each of the lead-out lines intersects with corresponding one of the scanning lines at an intersection and is electrically coupled to the corresponding one of the scanning lines at a node. The node is disposed at the intersection or in a region surrounding the intersection. The driving circuit supplies corresponding one of the signal lines with a signal pulse corresponding to an image signal, and supplies corresponding one of the lead-out lines with a selection pulse having a peak value based on a distance from one end of the corresponding one of the lead-out lines to the corresponding node, after increasing the peak value with an increase in the distance.

Display apparatus and method of driving display panel having selection pulse for a scanning lead-out line based on distance

A semiconductor device includes a substrate, a gate electrode, an oxide semiconductor film, a first electrode, a second electrode, and a third electrode. The gate electrode is provided on the substrate. The oxide semiconductor film is provided on the substrate with the gate electrode interposed therebetween. The oxide semiconductor film includes a channel region facing the gate electrode and a low-resistance region adjacent to the channel region. The first electrode contains a constituent material same as that of the gate electrode, and has same thickness as that of the gate electrode. The second electrode has at least a portion facing the first electrode, and contains a constituent material same as that of the oxide semiconductor film. The third electrode has at least a portion provided at a position facing the first electrode with the second electrode interposed therebetween. The third electrode is electrically coupled to the first electrode.

Semiconductor device and display unit

Display device having multiple protective films

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Tokyo, Japan

Atsuhito Murai