Panasonic Corporation

Atsuhiro Hori

Hidenori Kamei

Syuusaku Maeda

A light emitting element and a light emitting device for which light extraction efficiency is enhanced are provided. A light emitting elementincludes a substratehaving light transmittance, a semiconductor layerin which an n-type layer, an active layer, and a p-type layerare stacked, a reflective electrodestacked on the semiconductor layerand configured to reflect light emitted from the active layer, toward the substrate, a p-side pad electrodestacked on the reflective electrode, an insulating filmcovering a side surface of the semiconductor layerand having light transmittance, a reflective filmstacked on the insulating filmand having light reflectivity, and an n-side electrodeprovided on the substrate

Light emitting element and light emitting device

In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.

Growing community of inventors

Kagoshima, Japan

Atsuhiro Hori