Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Atsuhiko Yamamoto

Akihiro Yamada

Hideo Kido

Atsushi Masagaki

Hideshi Abe

Keiji Tatani

Takeshi Yanagita

Harumi Ikeda

Masanori Ohashi

Masakazu Furukawa

Itaru Oshiyama

Kazunobu Ota

Takayuki Enomoto

Shinichiro Izawa

Toshifumi Wakano

Yoshiki Ebiko

Nanako Kato

Yusuke Uesaka

Yasushi Tateshita

Hiromi Okazaki

Tomomi Ito

Yu Shiihara

A solid-state imaging device includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes a photoelectric conversion part embedded away from a substrate front surface of a semiconductor substrate, a memory part that holds a charge generated in the photoelectric conversion part, a first transfer transistor, a second transfer transistor, and a third transfer transistor connected in series between the photoelectric conversion part and the memory part, an accumulation part that accumulates the charge transferred from the memory part, and a light shielding part that covers a portion of the memory part facing a substrate rear surface side of the semiconductor substrate and has an opening between the photoelectric conversion part and the substrate front surface.

Solid-state imaging device, pixel driving method, and electronic apparatus

A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

Light detecting device and electronic apparatus including shared reset and amplification transistors

An imaging device includes a first chip (). The first chip includes first and second pixels including respective first and second photoelectric conversion regions (PD) that convert incident light into electric charge. The first chip includes a first connection region for bonding the first chip to a second chip () and including a first connection portion () overlapped with the first photoelectric conversion region in a plan view, and a second connection portion overlapped with the second photoelectric conversion region in the plan view. The first photoelectric region receives incident light of a first wavelength, and the second photoelectric conversion region receives incident light of a second wavelength that is greater than the first wavelength. The first connection portion overlaps an area of the first photoelectric conversion region that is larger than an area of the second photoelectric conversion region overlapped by the second connection portion.

Solid-state imaging device configured by electrically bonding the respective electrodes of a plurality of semiconductor chips

The present invention relates to a solid-state imaging device. In a pixel array section in the solid-state imaging device, a vertical signal line is provided right under power supply wiring apart from a floating diffusion region in order to reduce load capacitance of the vertical signal line. Furthermore, the power supply wiring is wired to make a cover rate of each vertical signal line with respect to the power supply wiring nearly uniform. As a result, it is possible to suppress variation of load capacitance of the vertical signal line for each pixel. It becomes possible to suppress deviation in a black level, variation of charge transfer, and variation of settling. It becomes possible to obtain an image with higher quality.

Solid-state imaging device and electronic device

Solid-state imaging device and electronic apparatus

Solid-state imaging device and electronic apparatus including transistors with differently sized gate terminals

A solid state imaging device includes: a group of a plurality of pixels configured to include pixels of the same color coding and with no pixel sharing between each other; and a color filter that is formed by Bayer arrangement of the group of a plurality of pixels.

Solid state imaging device, signal processing device, and electronic apparatus having pixel sharing units and color filter coding units

To prevent a decrease in yield due to a break in a signal line that transmits an image signal, while preventing a decrease in image quality. A solid-state image sensor includes a photoelectric conversion unit, a plurality of image signal lines, and output control units. In the solid-state image sensor, the photoelectric conversion unit generates an image signal that is a signal corresponding to incident light. In addition, the plurality of image signal lines transmit the image signal. Furthermore, the output control units are connected to the respective plurality of image signal lines and output the generated image signal to the respective plurality of image signal lines.

Solid-state image sensor and imaging device

A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.

Solid-state imaging device, camera module and electronic apparatus

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device

Imaging device, signal processing device, and electronic apparatus having pixel sharing units that include portions of a color filter arrangement

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Kanagawa, Japan

Atsuhiko Yamamoto