Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Atsuhiko Ashitani

Arito Ogawa

Atsuro Seino

Masanori Sakai

Yukinao Kaga

Ryohei Maeno

Satoshi Okada

Norikazu Mizuno

Yuji Takebayashi

Shintaro Kogura

Tsutomu Kato

Kota Kowa

A film having film continuity can be formed. There is provided a technique including: preparing a substrate having a metal-containing film formed on a surface thereof; and slimming the metal-containing film by pulse-supplying a halogen-containing gas to the substrate.

Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Method of manufacturing semiconductor device

To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Reaction tube

Growing community of inventors

Toyama, Japan

Atsuhiko Ashitani