Intel Corporation

Atm G Sarwar

Sasikanth Manipatruni

Ian A Young

Tanay Gosavi

Noriyuki Sato

Kaan Oguz

Kevin O'Brien

Hui Jae Yoo

Christopher J Wiegand

Angeline Smith

Tofizur Rahman

Benjamin Buford

Gary Allen

A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.

Spin orbit torque (SOT) memory devices and their methods of fabrication

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North Plains, OR, United States of America

Atm G Sarwar