L-3 Communications Corporation

Raytheon Company

Other

Umicore, S.a.

Umicore

Athanasios John Syllaios

Thomas R Schimert

Roland W Gooch

William L McCardel

John F Brady

Edward G Meissner

William David Autery

Gregory Stewart Tyber

Donald Bryan Christian

Thomas P Fagan, Iii

Michael F Taylor

Allan Leroy Buehler

John H Tregilgas

Sameer Kumar Ajmera

Dipankar Chandra

Marissa Marie Barnard

Andre Deon Walker

Prem Chahal

A center region of conductive material/s may be disposed or 'sandwiched' between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure.

Transitioned film growth for conductive semiconductor materials

Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.

Pixel-level optical elements for uncooled infrared detector devices

Optically transitioning pixel-level filtering using a multi-level structure that includes an isolated optically transitioning filter element that is suspended over a corresponding radiation detector element in a one-to-one relationship to provide, for example, one or more features such as spectral detection and/or selective radiation immunity.

Pixel-level optically transitioning filter elements for detector devices

Systems and methods for color correcting radiation by alternately focusing a first radiation spectrum on a first radiation spectrum detector, and then focusing at least one additional radiation spectrum on at least one additional radiation spectrum detector.

Color correction for radiation detectors

Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.

Microbolometer infrared detector elements and methods for forming same

Infrared detector elements and methods for forming infrared detector elements in which the top metal layer of CMOS circuitry of the detector element is employed as a lead metal reflector for the infrared detector.

Infrared detector elements and methods of forming same

Systems and methods for solder bonding that employ an equilibrium solidification process in which the solder is solidified by dissolving and alloying metals that raise the melting point temperature of the solder. Two or more structure surfaces may be solder bonded, for example, by employing heating to melt the solder and holding the couple at a temperature above the initial solder melting point of the solder until interdiffusion reduces the volume fraction of liquid so as to form a solid bond between surfaces before cooling to below the initial melting point of the solder.

Systems and methods for solder bonding

Systems and methods for bonding semiconductor devices and/or multiple wafers, in the form of a first segmented wafer and a second unsegmented wafer which may have different temperature coefficients of expansion (TCE), and which may be bonded together, with or without the presence of a vacuum.

Systems and methods for bonding

Systems and methods for providing multi-spectral image capability using an integrated multi-band focal plane array that, in one example, may be employed to simultaneously image in the visible spectrum and infrared spectrum using an integrated dual-band focal plane array, e.g., by including visible imaging circuitry within read out integrated circuitry (ROIC) used to readout infrared detector elements within the same pixel element/s.

Systems and methods for integrating focal plane arrays

Methods for making optically blind reference pixels and systems employing the same. The reference pixels may be configured to be identical to, or substantially identical to, the active detector elements of a focal plane array assembly. The reference pixels may be configured to use the same relatively longer thermal isolation legs as the active detector pixels of the focal plane, thus eliminating joule heating differences. An optically blocking structure may be placed in close proximity directly over the reference pixels.

Optically blocked reference pixels for focal plane arrays

A method for manufacturing optically-transparent lids includes etching sub-wavelength structures on a surface of a lid wafer. The structures may be arrayed in a hexagonally closed-packed pattern.

Sub-wavelength structures for reduction of reflective properties

In accordance with the present invention, a system and method for the automated casting of infrared glass optical components is provided. The system includes a mold for casting infrared glass into lenses, a mold chamber operable to heat the mold to a temperature above the melting temperature of the infrared glass, and a casting chamber operable to fill the mold with molten infrared glass. The method includes heating a mold in a mold chamber to a temperature above the melting temperature of infrared glass, casting molten infrared glass into the mold in a casting chamber; and cooling the mold to a temperature below the glass transition temperature of the infrared glass.

System and method for automated casting of infrared glass optical components

A system and method for preparing chalcogenide glass are provided that allow for larger quantities of glass to be produced with lower production costs and less risks of environmental hazards. The system includes a reaction container operable to hold chalcogenide glass constituents during a glass formation reaction, a stirring rod operable to mix the contents of the reaction container, a thermocouple operable to measure the temperature inside the reaction container, and a reaction chamber operable to hold the reaction container. The method includes placing chalcogenide glass constituents in a reaction container, heating the chalcogenide glass constituents above the melting point of at least one of the constituents, promoting dissolving or reaction of the other constituents, stirring the reaction melt, maintaining an overpressure of at least one atmosphere over the reaction melt, and cooling the reaction melt to below the chalcogenide glass transition temperature.

System and method for vapor pressure controlled growth of infrared chalcogenide glasses

A method for manufacturing integrated circuit device lids includes creating a lid cavity on the surface of a lid wafer, forming a sealing surface on the lid wafer that surrounds the lid cavity, and forming a trench on the lid wafer between the lid cavity and the sealing surface. The resulting structure uptakes excess sealing surface material and prevents such material from entering the lid cavity.

Growing community of inventors

Richardson, TX, United States of America

Athanasios John Syllaios