Ngk Insulators, Inc.

Asumi Nagai

Hirofumi Yamaguchi

Noboru Nishimura

Yuji Katsuda

Kyohei Atsuji

Keita Miyanishi

Katsuhiro Inoue

Soichiro Aoyagi

A stacked structure includes a first structure formed of a composite sintered body that contains AlN and MgAlOas main phases, and a second structure formed of a ceramic sintered body and stacked on and bonded to the first structure. A difference in linear thermal expansion coefficient between the first structure and the second structure is less than or equal to 0.3 ppm/K.

Stacked structure and semiconductor manufacturing apparatus member

A composite sintered body includes a base material that includes ceramic as a main component, and an electrode arranged inside the base material or on a surface of the base material. The electrode contains W and ZrO.

Composite sintered body, semiconductor manufacturing apparatus member, and method of producing composite sintered body

The composite sintered body includes AlO, and MgAlO. The content of AlOin the composite sintered body is not less than 95.5% by weight. The average sintered grain size of AlOin the composite sintered body is not less than 2 μm and not greater than 4 μm. The standard deviation of sintered grain size distribution of AlOin the composite sintered body is not greater than 0.35. The bulk density of the composite sintered body is not less than 3.94 g/cmand not greater than 3.98 g/cm. In the composite sintered body, the ratio of amount of crystal phase of MgAlOto that of AlOis not less than 0.003 and not greater than 0.01.

Composite sintered body, semiconductor manufacturing apparatus member, and method of manufacturing composite sintered body

A method of manufacturing a composite sintered body includes a step (Step S) of molding mixed powder in which AlO, SiC, and MgO are mixed, into a green body having a predetermined shape and a step (Step S) of generating a composite sintered body by sintering the green body. Then, in Step S, the ratio of SiC to the mixed powder is not lower than 4.0 weight percentage and not higher than 13.0 weight percentage. Further, the purity of AlOin Step Sis not lower than 99.9%. It is thereby possible to suppress the abnormal grain growth of AlOand suitably manufacture a composite sintered body having high relative dielectric constant and withstand voltage, and low tan &#x3b4;.

A composite sintered body includes a base material that contains AlOas a main component, and an electrode arranged inside or on a surface of the base material. The electrode contains Ru, ZrO, and AlO.

Composite sintered body, semiconductor manufacturing apparatus member and method of producing composite sintered body

According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 &#x3bc;m or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.

Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device

A member for a semiconductor manufacturing apparatus according to the present invention is a member that is to be joined to an aluminum nitride base member. The member is composed of a composite material including principal constituent phases that are aluminum nitride and a pseudopolymorph of aluminum nitride which includes silicon, aluminum, oxygen, and nitrogen. The pseudopolymorph of aluminum nitride has at least one periodic structure selected from a 27R phase and a 21R phase or an X-ray diffraction peak at least at 2&#x3b8;=59.8&#xb0; to 60.8&#xb0;. The composite material has a thermal conductivity of 50 W/mK or less at room temperature.

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Okazaki, Japan

Asumi Nagai