Ngk Insulators, Inc.

Asumi Jindo

Yuji Katsuda

Morimichi Watanabe

Takahiro Tomita

Kenji Morimoto

Yosuke Sato

Yoshinori Isoda

Katsuhiro Inoue

Nobuyuki Kondo

Kenichiro Aikawa

Takashi Kataigi

Hiroya Sugimoto

Shingo Amano

Toru Hayase

Atsushi Watanabe

Ken Kuwamoto

A ceramic memberaccording to the present invention includes a ceramic base, which contains a solid solution Mg(Al)O(N) in which Al and N components are dissolved in magnesium oxide as the main phase, and an electrodedisposed on a portion of the ceramic baseand containing at least one of nitrides, carbides, carbonitrides, and metals as an electrode component. The ceramic basemay have an XRD peak of a (111), (200), or (220) plane of Mg(Al)O(N) measured using a CuK&#x3b1; ray at 2&#x3b8;=36.9 to 39, 42.9 to 44.8, or 62.3 to 65.2 degrees, respectively, between a magnesium oxide cubic crystal peak and an aluminum nitride cubic crystal peak.

Ceramic member, member for semiconductor manufacturing apparatus, and method for manufacturing ceramic member

A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2&#x3b8;=47 to 50&#xb0; by CuK&#x3b1; X-ray.

Heating device

A heating apparatusA includes a susceptor partA having a heating faceof heating a semiconductor W, and a ring shaped partA provided in the outside of the heating face. The ring shaped partA is composed of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2&#x3b8;=47 to 50&#xb0; taken by using CuK&#x3b1; ray.

A member for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al&#x2014;Si&#x2014;Mg or Al&#x2014;Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

Cooling plate, method for manufacturing the same, and member for semiconductor manufacturing apparatus

A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, TiSiC, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al&#x2014;Si&#x2014;Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

A heating apparatusA includes a susceptor having a heating faceof heating a semiconductor. The susceptor includes a plate shaped main bodyand a surface corrosion resistant layerincluding the heating face. The surface corrosion resistant layeris made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2&#x3b8;=47 to 50&#xb0; by CuK&#x3b1; X-ray.

An electrostatic chuckA includes a susceptorA having an adsorption faceof adsorbing a semiconductor, and an electrostatic chuck electrodeembedded in the susceptor. The susceptorA includes a plate shaped main bodyand a surface corrosion resistant layerincluding the adsorption face. The surface corrosion resistant layeris made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2&#x3b8;=47 to 50&#xb0; by CuK&#x3b1; X-ray.

Electrostatic chuck

A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40&#xb0; C. to 570&#xb0; C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.

Dense composite material, method for producing the same, and component for semiconductor production equipment

A dense composite material according to the present invention contains, in descending order of content, silicon carbide, titanium silicon carbide, and titanium carbide as three major constituents. The dense composite material contains 51% to 68% by mass of silicon carbide and no titanium silicide and has an open porosity of 1% or less. This dense composite material has properties such as an average linear thermal expansion coefficient of 5.4 to 6.0 ppm/K at 40&#xb0; C. to 570&#xb0; C., a thermal conductivity of 100 W/m&#xb7;K or more, and a four-point bending strength of 300 MPa or more.

Dense composite material, method for manufacturing the same, joined body, and member for semiconductor manufacturing apparatuses

Each of electrostatic chucksA toF includes a susceptorA having an adsorption faceof adsorbing a semiconductor, and an electrostatic chuck electrodeembedded in the susceptor. The susceptor includes a plate shaped main bodyand a surface corrosion resistant layerincluding the adsorption face. The surface corrosion resistant layeris made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising MgO&#x2014;AlN solid solution wherein aluminum nitride is dissolved into magnesium oxide.

A laminated structureincludes a first structurecontaining a main phase of magnesium-aluminum oxynitride, a second structurecontaining a main phase of aluminum nitride and grain boundary phases of a rare-earth aluminum composite oxide having a garnet-type crystal structure, and a reaction layerformed between the first structureand the second structure. The reaction layeris an aluminum nitride layer containing a smaller amount of grain boundary phasesof the rare-earth aluminum composite oxide than the second structure. The reaction layerof the laminated structurehas a thickness of 150 &#x3bc;m or less. The reaction layeris formed during the sintering by diffusing the grain boundary phasesinto the first structure

Laminated structure, member for semiconductor manufacturing apparatus, and method for producing laminated structure

Initially, an YbOraw material was subjected to uniaxial pressure forming at a pressure of 200 kgf/cm, so that a disc-shaped compact having a diameter of about 35 mm and a thickness of about 10 mm was produced, and was stored into a graphite mold for firing. Subsequently, firing was performed by using a hot-press method at a predetermined firing temperature (1,500&#xb0; C.), so as to obtain a corrosion-resistant member for semiconductor manufacturing apparatus. The press pressure during firing was specified to be 200 kgf/cmand an Ar atmosphere was kept until the firing was finished. The retention time at the firing temperature (maximum temperature) was specified to be 4 hours. In this manner, the corrosion-resistant member for semiconductor manufacturing apparatus made from an YbOsintered body having an open porosity of 0.2% was obtained.

Corrosion-resistant member for semiconductor manufacturing apparatus and method for manufacturing the same

A ceramic material mainly contains magnesium, aluminum, oxygen, and nitrogen, in which the ceramic material has a magnesium-aluminum oxynitride phase serving as a main phase, wherein XRD peaks of the magnesium-aluminum oxynitride phase measured with CuK&#x3b1; radiation appear at at least 2&#x3b8;=47 to 50&#xb0;.

Ceramic material, laminate, member for use in semiconductor manufacturing equipment, and sputtering target member

A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO&#x2014;AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO&#x2014;AlN solid solution measured with CuK&#x3b1; radiation appear at 2&#x3b8;=42.9 to 44.8&#xb0; and 62.3 to 65.2&#xb0;, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2&#x3b8;=36.9 to 39&#xb0;, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.

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Okazaki, Japan

Asumi Jindo