Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Assim Boukhayma

Antoine Dupret

Arnaud Peizerat

A CMOS image sensor including at least one pixel and one circuit arranged to receive, on a first node of the circuit, an analog signal representative of the luminosity level received by the pixel, the circuit being capable of successively acquiring 2samples of said signal, n being an integer greater than or equal to 1, and of delivering, on a second node of the circuit, an analog signal having a value equal to the average of the values of said samples, without generating an intermediate signal having a value greater than the value of the largest acquired sample.

Correlated multiple sampling CMOS image sensor

A method of acquiring an image of a scene illuminated by a first beam, by means of a sensor including at least two pixels, including the steps of: a) for each pixel, reading a first output value of the pixel representative of the intensity of the radiation received by the pixel during a first integration period during which the sensor is illuminated by a second beam coherent with the first beam; and b) for each pixel, reading a second output value of the pixel representative of the intensity of the radiation received by the pixel during a second integration period during which the sensor is not illuminated by the second beam, wherein steps a) and b) are repeated a plurality of times by changing, between two successive iterations, the angle of incidence or a phase parameter of the second beam.

Image acquisition method and system

A CMOS image sensor including a pixel including: a photodiode in series with a MOS transistor between a first reference potential and a sense node; a MOS transistor connecting the sense node to a second reference potential; and a third MOS transistor assembled as a source follower between the sense node and a read circuit, wherein the oxide thickness of the third transistor is smaller than that of the first and second transistors, the voltage difference between the first and second reference potentials is greater than the maximum voltage capable of being applied between two terminals of the third transistor, and the body or drain region of the third transistor is connected to a third reference potential in the range between the first and second potentials.

Growing community of inventors

Grenoble, France

Assim Boukhayma