Cree Gmbh

Other

Metawave Corporation

Asmita Dani

Qianli Mu

Cristian Gozzi

Maha Achour

George Daniel

Chiara Pelletti

Yan Wang

Examples disclosed herein relate to a dynamic supply modulation power amplifier architecture for millimeter wave applications. The architecture includes phase shifters coupled to a power input port, power amplifiers coupled to respective power output ports, variable gain amplifiers coupled to the phase shifters and to the power amplifiers and are configured to supply dynamically varying input power to the power amplifiers. The architecture includes a first look-up table coupled to the variable gain amplifiers to control the variable gain amplifiers. The architecture also includes a second look-up table coupled to the power amplifiers, where each of the power amplifiers is supply modulated by active drain voltage modulation controlled by the second look-up table and variable input power from the variable gain amplifiers. Other examples disclosed herein include a radar system for use in an autonomous driving vehicle and an analog beamforming antenna for millimeter wave applications.

Dynamic supply modulation power amplifier architecture for millimeter wave applications

Examples disclosed herein relate to a vector modulator architecture, having an input splitter network configured to receive a radio frequency (RF) input signal and generate a plurality of quadrature signals at different phases, a variable gain amplifier (VGA) stage coupled to the input splitter network and configured to apply a first gain to one or more of the plurality of quadrature signals, a power combiner coupled to the VGA stage and configured to combine the plurality of quadrature signals into a combined RF signal, and a power amplifier (PA) stage coupled to the power combiner and configured to apply a second gain to the combined RF signal and generate an output RF signal. Other examples disclosed herein relate to an antenna system for autonomous vehicles and a radar system for use in an autonomous driving vehicle.

Vector modulator for millimeter wave applications

Examples disclosed herein relate to an intelligent metamaterial radar. The radar has an Intelligent Metamaterial ('iMTM') antenna module to radiate a transmission signal with a dynamically controllable iMTM antenna in a plurality of directions based on a controlled reactance and generate radar data capturing a surrounding environment. The radar also has an iMTM interface module to detect and identify a target in the surrounding environment from the radar data and to control the iMTM antenna module.

Intelligent metamaterial radar having a dynamically controllable antenna

Examples disclosed herein relate to a Doherty Power Amplifier ('DPA') with integrated second harmonic injection. The DPA includes an amplifier circuit having a carrier amplifier and a peaking amplifier, and a combiner network coupled to the amplifier circuit, the combiner network having a plurality of transmission lines and a LC resonant circuit to inject a second harmonic from the carrier amplifier into the peaking amplifier.

Doherty power amplifier with integrated second harmonic injection

A semiconductor device includes a metal base, a transistor die mounted on the metal base, a lid over the transistor die, and a multilayer printed circuit board electrically connected to the transistor die. The multilayer printed circuit board comprises a first portion positioned between the lid and the metal base, a second portion positioned outside of the lid, a plurality of embedded conductive layers, an embedded dielectric layer disposed between at least two of the plurality of embedded conductive layers, and at least one embedded reactive component formed from at least one of the embedded conductive layers.

PCB based semiconductor device

A Doherty amplifier includes a metal baseplate having a die attach region and a peripheral region; a main amplifier and one or more peaking amplifiers, each amplifier comprising a transistor die that includes at least one RF terminal; and a multilayer circuit board having a first side attached to the peripheral region and a second side facing away from the baseplate. The circuit board includes two embedded electrically conductive layers separated from the two sides by respective composite fiber layers, and an embedded dielectric layer disposed between the embedded electrically conductive layers and having a higher dielectric constant than either of the composite fiber layers. The Doherty amplifier also includes an RF impedance matching network that is electrically connected to an RF terminal of at least one amplifier transistor die, and that comprises one or more reactive components formed from at least one of the embedded electrically conductive layers.

PCB based semiconductor package with impedance matching network elements integrated therein

A semiconductor package includes a metal baseplate having a die attach region and a peripheral region, a transistor die having a reference terminal attached to the die attach region and an RF terminal facing away from the baseplate, and a multilayer circuit board having a first side attached to the peripheral region and a second side facing away from the baseplate. The multilayer circuit board includes two embedded electrically conductive layers that are separated from the first and second sides by layers of composite fiber, and an embedded dielectric layer disposed between the two embedded electrically conductive layers. The embedded dielectric layer has a higher dielectric constant than the layers of composite fiber.

Growing community of inventors

San Jose, CA, United States of America

Asmita Dani