Globalfoundries Inc.

Globalfoundries U.S. Inc.

Asli Sirman

Jinping Liu

Jiehui Shu

Haigou Huang

Huy Cao

Chih-Chiang Chang

Keith Howard Tabakman

Man Gu

Charlotte DeWan Adams

Tao Han

Junsic Hong

Methods produce integrated circuit structures that include (among other components) fins extending from a first layer, source/drain structures on the fins, source/drain contacts on the source/drain structures, an insulator on the source/drain contacts defining trenches between the source/drain contacts, gate conductors in a lower portion of the trenches adjacent the fins, a first liner material lining a middle portion and an upper portion of the trenches, a fill material in the middle portion of the trenches, and a second material in the upper portion of the trenches. The first liner material is on the gate conductors in the trenches.

Multi-step insulator formation in trenches to avoid seams in insulators

A method of forming a robust low-k sidewall spacer by exposing an upper portion of the spacer to a thermal and plasma treatment prior to downstream processes and resulting device are provided. Embodiments include providing a pair of gates separated by a canyon trench over a substrate, an EPI layer in a bottom of the canyon trench, respectively, and a low-k spacer on each opposing sidewall of the pair; forming a masking layer in a bottom portion of the canyon trench, an upper portion of the low-k spacers exposed; and treating the upper portion of the low-k spacers with a thermal and plasma treatment.

Semiconductor devices with robust low-k sidewall spacers and method for producing the same

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Malta, NY, United States of America

Asli Sirman