International Business Machines Corporation

Asit Kumar Ray

Matthew Joseph BrightSky

Takashi Ando

Chung H Lam

Hiroyuki Miyazoe

Seyoung Kim

SangBum Kim

Wanki Kim

Norma Edith Sosa Cortes

Arnold Reisman

Bahman Hekmatshoartabari

Guy M Cohen

Cheng-Wei Cheng

Evgeni Petrovich Gousev

Robert L Bruce

Fabio Carta

Kai Chen

An electronic device includes a first electrode, a second electrode, and a memory component configured to store a resistive state. The memory component includes a layered region arranged in direct contact with the first electrode and a bulk region arranged in direct contact with the second electrode. The layered region includes a plurality of first layers made of a first material and a plurality of second layers made of a second material alternatingly arranged with one another. The first material is a phase-change material and the second material is a non-phase-change material. The bulk region is a continuous mass made of a third material that is different than the first material and the second material, and the bulk region is in direct contact with at least two of the first layers and at least one of the second layers of the layered region.

Phase-change memory cell with mixed-material switchable region

Techniques facilitating resistive random-access memory device with step height difference are provided. A resistive random-access memory device can comprise a first electrode located within a trench of a dielectric layer. The resistive random-access memory device can also comprise a metal oxide layer comprising a first section located within the trench of the dielectric layer, and a second section located over the first electrode, and over a barrier metal layer. Further, the resistive random-access memory device can comprise a second electrode located over the metal oxide layer.

Resistive random-access memory device with step height difference

A method of fabricating an access device in a crosspoint memory array structure during BEOL processing includes: forming at least a first doped semiconductor layer on an upper surface of a first conductive layer, the first doped semiconductor layer being in electrical connection with the first conductive layer; exposing at least a portion of the first doped semiconductor layer to a directed energy source to cause localized annealing in the first doped semiconductor layer to activate a dopant of a first conductivity type in the first doped semiconductor layer, thereby converting at least a portion of the first doped semiconductor layer into a polycrystalline layer; forming a second conductive layer over a least a portion of the first doped semiconductor layer; and etching the first doped semiconductor layer and the first and second conductive layers to form an access device that is self-aligned with the first and second conductive layers.

Crosspoint phase change memory with crystallized silicon diode access device

Devices and/or methods that facilitate forming a resistive memory crossbar array with a multilayer hardmask are provided. In some embodiments, a resistive random access memory (RRAM) can comprise a multilayer hardmask comprising three layers, an interlayer oxide between a first layer of silicon nitride and a second layer of silicon nitride. In other embodiments, an RRAM can comprise a multilayer hardmask comprising two layers, a layer of an oxide on a layer of silicon nitride.

Resistive memory crossbar array with a multilayer hardmask

A resistive memory device and a method for fabricating the resistive memory device. The memory device includes a first electrode and a resistive memory element in electrical contact. The memory device also includes a non-programmable stabilizer element in electrical and thermal contact with the resistive memory element. The stabilizer element has at least one physical dimension based on a physical characteristic of the resistive memory element such that the maximum resistance of the stabilizer element is substantially less than the maximum resistance of the resistive memory element.

Resistive memory with a stabilizer

A method for forming a semiconductor device comprising forming a dielectric layer on an area of a silicon substrate; implanting nitrogen atoms into said dielectric layer; forming a conductive layer of polysilicon over said dielectric layer; annealing the dielectric layer to drive the nitrogen atoms to form a gate dielectric of a dielectric layer having silicon nitride layer interfaces of the dielectric layer and the silicon substrate and the polysilicon layers; and, forming a gate structure in said polysilicon layer and source/drain regions in said silicon substrate, said source/drain regions aligned with said gate structure.

Gate dielectric with self forming diffusion barrier

This invention relates to a process for forming thin insulator films on conductive or semiconductive substrates in a gas plasma and more particularly relates to a process for the growth of such thin insulating films wherein the rate of insulator growth on one surface of a substrate is controlled by predepositing specific amounts of insulating films such as silicon dioxide or silicon nitride on the other surface of the substrate. Substrates with predeposited insulators form insulating films much more slowly in a gas plasma than bare substrates and, after an initial fast growth phase, the insulator thickness reaches a steady growth phase. Because of the resulting slower rate of insulator formation, control of the desired insulator thickness is easy and it is even easier if the desired insulator thickness is close to the steady growth phase.

Technique for thin insulator growth

Plasma oxidation of the surface of a substrate which surface does not face towards the plasma is achieved by placing the substrate perpendicular to the plasma in a region at a pressure of at least about 10 mtorr.

Plasma oxidation

Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure.

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Yorktown Heights, NY, United States of America

Asit Kumar Ray