USA As Represented by Secretary of the Navy

Asif Khan

Karl D Hobart

Marko J Tadjer

Michael Anthony Mastro

Mark Goorsky

Samuel Graham, Jr

Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly bonded to one another by means of atomic layer bonding without the use of any interfacial bonding materials, where spontaneous polarization of the two layers produced by joining the two materials by direct wafer bonding produces a strong 2DEG or 2DHG at the interface. Embodiments include GaN/AlN and AlN/GaN heterostructures having an N- or Ga-polar GaN layer directly bonded to an N- or Al-polar Al layer. Other embodiments can incorporate an InN epitaxial layer or an alloy incorporating an N-polar, Al-polar, or Ga-polar material having In, Al, or Ga in the crystal lattice, e.g., (InAlN), InGaN, AlGaN, InAlGaN, where (0<x≤1, 0<y≤1, 0<x+y≤1).

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Asif Khan