Globalfoundries U.S. Inc.

Asif J Chowdhury

Yusheng Bian

Michal Rakowski

Won Suk Lee

Roderick Alan Augur

Alec Hammond

Ajey Poovannummoottil Jacob

Kenneth John Giewont

Abdelsalam A Aboketaf

Petar I Todorov

Andreas Daniel Stricker

Michel Rakowski

Structures for a photodetector or light absorber and methods of forming a structure for a photodetector or light absorber. The structure includes a pad, a waveguide core adjoined to the pad, and a light-absorbing layer on the pad. The waveguide core includes a first longitudinal axis, and the light-absorbing layer includes a second longitudinal axis and an end surface intersected by the second longitudinal axis. The end surface of the light-absorbing layer is positioned adjacent to the waveguide core. The first longitudinal axis of the first waveguide core is inclined relative to the second longitudinal axis of the light-absorbing layer and/or the end surface slanted relative to the second longitudinal axis.

Photodetectors and absorbers with slanted light incidence

Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide. Thus, the heating element is usable for thermally tuning the closed-curve waveguide via the closed-curve thermal coupler to minimize any temperature-dependent resonance shift (TDRS).

Optical device with low-loss thermally tunable closed-curve optical waveguide

Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.

Avalanche photodetectors with a multiple-thickness charge sheet

Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a first waveguide core having a first taper, a semiconductor layer having a sidewall adjacent to the first taper, and a second waveguide core having a second taper that is positioned to overlap with the first taper and a curved section. The second taper is longitudinally positioned between the sidewall of the semiconductor layer and the curved section. The curved section terminates the second waveguide core.

Photodetectors integrated with an inverse taper including a curved tip

Structures including a grating coupler and methods of forming a structure that includes a grating coupler. The grating coupler includes segments that are spaced along a longitudinal axis. Each segment is inclined relative to the longitudinal axis. Each segment includes a first curved section having a first curvature and a second curved section having a second curvature that is inverted relative to the first curvature.

Grating couplers with segments having sections of inverted curvature

Structures for a wavelength-division multiplexing filter and methods of forming a structure for a wavelength-division multiplexing filter. The structure includes a first slab having a first perimeter, a first waveguide core coupled to the first slab, and a plurality of second waveguide cores coupled to the first slab. A second slab is positioned to overlap with the first slab. The second slab includes a second perimeter and openings that are distributed inside the second perimeter. The openings of the second slab penetrate through the second slab.

Perforated wavelength-division multiplexing filters

Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a light-absorbing region having a side edge, an anode adjacent to the side edge of the light-absorbing region, and a cathode adjacent to the side edge of the light-absorbing region.

Photodetectors with adjacent anode-cathode pairs

The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.

Photodiode

Structures for an optical power splitter and methods of forming a structure for an optical power splitter. A splitter body defines a multimode interference region of the optical power splitter. A first side element positioned adjacent to a first side surface of the splitter body, and a second side element positioned adjacent to a second side surface of the splitter body.

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Clifton Park, NY, United States of America

Asif J Chowdhury