University of Utah Research Foundation

Applied Materials, Inc.

Ashutosh Tiwari

Michael R Snure

Makarand Karmarkar

Nathan Wheeler Gray

Kaushal Kishore Singh

Omkaram Nalamasu

Nety M Krishna

Haritha Sree Yaddanapudi

Shrikant Saini

Yinong Yin

Kun Tian

A thermoelectric material, having a formula TbM1M2Owhere M1 is one of Ca, Mg, Sr, Ba and Ra, M2 is at least one of Co, Fe, Ni, and Mn, x ranges from 0.01 to 5; y is 1, 2, 3, or 5; z is 1, 2, 3, or 4; and w is 1, 2, 3, 4, 5, 7, 8, 9, or 14. The thermoelectric material is chemically stable within 5% for one year and is also non-toxic. The thermoelectric material can also be incorporated into a thermoelectric system which can be used to generate electricity from waste heat sources or to cool an adjacent region.

High-performance terbium-based thermoelectric materials

Nanostructured films including a plurality of nanowells, the nanowells having a pore at the top surface of the film, the pore defining a channel that extends downwardly towards the bottom surface of the film are provided. Also provided are methods including exposing a growth substrate to an anodizing bath, applying ultrasonic vibrations to the anodizing bath, and generating a current through the anodizing bath to form the nanostructured film. The nanostructured films may be formed from TiOand may be used to provide solid state dye sensitized solar cells having high conversion efficiencies.

Nanostructured films and related methods

Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.

PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods

Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBOpowders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO, using targets made of the CuBOpowders. The CuBOthin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBOthin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBOas a channel layer and thin film solar cells with CuBOp-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBOin various forms, including 'core-shell' and 'nano-couple' particles, and methods of manufacture, are also described.

Copper delafossite transparent P-type semiconductor thin film devices

The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.

Growing community of inventors

Sandy, UT, United States of America

Ashutosh Tiwari