Applied Materials, Inc.

Ashutosh Agarwal

Sanjeev Baluja

Dhritiman Subha Kashyap

Vijay D Parkhe

Kartik Bhupendra Shah

Tejas Ulavi

Eric J Hoffmann

Deepak Jadhav

Rakesh Ramadas

Amit Rajendra Sherekar

Er-Xuan Ping

Srinivas Gandikota

Randhir P S Thakur

Muhammad M Rasheed

Yixiong Yang

Joseph F AuBuchon

Chunlei Zhang

Vijay Parihar

Kaushal Kishore Singh

Muhannad Mustafa

Kalyanjit Ghosh

Mario Dan Sanchez

Ashish Goel

Kenneth Brian Doering

Vivek Bharat Shah

Kaushik Comandoor Alayavalli

Surajit Kumar

Guoqiang Jian

Yuxing Zhang

Daniel Hwung

Yanjun Xia

Youngki Chang

Shrihari Sampathkumar

Shashidhara Patel H B

Naveen Kumar Nagaraja

Kwok Feng Wong

Gas mixer

Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic top plate having a top surface with a processing region. One or more electrodes is within the ceramic top plate. A plurality of mesas is within the processing region and on the top surface of the ceramic plate or vertically over an edge of one of the one or more electrodes.

Electrostatic chuck with mesas

Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An actuation plate within the processing volume causes, upon movement of the support assembly, the primary lift pins to elevate through contact with the secondary lift pins.

Apparatus and methods to transfer substrates into and out of a spatial multi-substrate processing tool

Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

Deposition apparatus and methods using staggered pumping locations

Gas distribution plate

Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.

Metrology slot plates

Process chambers and methods for leveling a motor shaft and substrate support plane are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A first plurality of sensors is arranged at about the same radial distance from the rotational axis and at different angular positions relative to the rotational axis and a second plurality of sensors are arranged to measure the support plane. An angle-dependent motor leveling profile is determined and shim values for the motor bolts are determined to level the motor shaft. The support plane is measured using the second plurality of sensors to level the support plane perpendicular to the motor shaft.

Apparatus and methods for motor shaft and heater leveling

Methods for aligning a processing chamber using a centering ring and processing chambers having the centering ring are describes. The method includes determining an average central position for the centering ring based on the concentricity of the centering with the support surfaces and adjusting average position of centering ring to a final position based on the average central position.

Apparatus and methods for processing chamber lid concentricity alignment

A heater assembly having a backside purge gap formed between a top plate and a heater of the heater assembly, the top plate having a top plate wall. The top plate wall having an upper portion, a middle portion and a lower portion, the middle portion forming an incline relative to the top portion.

Heater assembly with purge gap control and temperature uniformity for batch processing chambers

Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

Wafer heater with backside and integrated bevel purge

Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.

Clean isolation valve for reduced dead volume

Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.

Showerhead with inlet mixer

Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.

Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate

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San Jose, CA, United States of America

Ashutosh Agarwal