Oci Company Ltd.

Institute of Ion-plasma and Laser Technologies

Institution of Ion-plasma and Laser Technologies

Ashurov Khatam

Yong Il Kim

Kyung Y Kim

Deok Yun Kim

Salikhov Shavkat

Rotshteyn Vladimir

Ashurova Khekayat

Azizov Sultan

Taek Joong Kim

Se In Yang

Kurbanov Aziz

Abdisaidov Ilyos

Ashurov Rustam

Abdurakhmanov Boris

Salimboev Akmal

Saidov Sabir

Kyung Yeol Kim

Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.

Method for preparing monosilane using trialkoxysilane

The present invention relates to a method for preparing SiH(OR)-type trialkoxysilane (wherein, R is a C1-C3 methyl, ethyl, propyl or isopropyl group), and more specifically, the method comprises the steps of: preventing the oxidation of a silicon surface by pulverizing raw silicon material in a solvent environment without contact with the air so that the initial induction period of the direct synthesis of trialkoxysilane is dramatically reduced; and removing impurities from a reaction environment by continuously selecting a part of the solvent through a membrane filter provided in a reactor body.

Method for preparing trialkoxysilane

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Tashkent, Uzbekistan

Ashurov Khatam