Semiconductor Components Industries, LLC

Ashok Challa

Dean E Probst

Peter Austin Burke

Joseph Andrew Yedinak

Balaji Padmanabhan

Yi Qiang Su

Jeffery Allen Neuls

Tirthajyoti Sarkar

Min Kyung Ko

In some aspects, the techniques described herein relate to a circuit including: a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain; and a snubber circuit coupled between the drain and the source, the snubber circuit including: a diode having a cathode and an anode, the cathode being coupled with the drain; a capacitor having a first terminal coupled with the anode, and a second terminal coupled with the source; and a resistor having a first terminal coupled with the anode and the first terminal of the capacitor, and a second terminal coupled with the source.

Integrated transistor and resistor-diode-capacitor snubber

In one general aspect, a device can include a first trench disposed in a semiconductor region, a second trench disposed in the semiconductor region, and a recess disposed in the semiconductor region between the first trench and the second trench. The recess has a sidewall and a bottom surface. The device also includes a Schottky interface along a sidewall of the recess and the bottom surface of the recess excludes a Schottky interface.

Device including a sidewall Schottky interface

Growing community of inventors

Milpitas, CA, United States of America

Ashok Challa