Texas Instruments Corporation

Ashley Norris

Bhaskar Srinivasan

Sopa Chevacharoenkul

Bernard John Fischer

Khanh Quang Le

Collin White

A method of fabricating an integrated circuit (IC) includes etching a trench in a semiconductor substrate having an aspect ratio (AR) &#x2267;5 and a trench depth &#x2267;10 &#x3bc;m. A dielectric liner is formed along the walls of the trench to form a dielectric lined trench. In-situ doped polysilicon is deposited into the trench to form a dielectric lined polysilicon filled trench having a doped polysilicon filler therein. The doped polysilicon filler after completion of fabricating the IC is essentially polysilicon void-free and has a 25&#xb0; C. sheet resistance &#x2266;100 ohms/sq. The method can include etching an opening at a bottom of the dielectric liner before depositing the polysilicon to provide ohmic contact to the semiconductor substrate.

Growing community of inventors

Bells, TX, United States of America

Ashley Norris