Texas Instruments Corporation

Ashish V Gokhale

David Leonard Larkin

Dhaval Atul Saraiya

Lily Springer

Makoto Takemura

Quang X Mai

The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate () located over or in a semiconductor substrate (), and an insulator () located over the first capacitor plate (), at least a portion of the insulator () comprising an interlevel dielectric layer (, or). The integrated high voltage capacitor further includes capacitance uniformity structures () located at least partially within the insulator () and a second capacitor plate () located over the insulator ().

Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor

The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate () located over or in a substrate (), and an insulator () located over the first capacitor plate (), at least a portion of the insulator () comprising an interlevel dielectric layer (or). The integrated high voltage capacitor further includes a second capacitor plate () located over the insulator () and a top-level dielectric layer () located at least partially along a sidewall of the second capacitor plate ().

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Allen, TX, United States of America

Ashish V Gokhale