Agilent Technologies, Inc.

Lumileds LLC

Avago Technologies Fiber IP (singapore) Pte. Ltd

Other

Stion Corporation

Avago Technologies Fiber IP Pte Ltd.

Ashish Tandon

Michael R T Tan

Ying-Lan Chang

David P Bour

Scott W Corzine

Michael H Leary

Luke Gordon

Robert D Wieting

Yu-Chen Shen

Tetsuya Takeuchi

Andrei Papou

Wen Yu

Rajat Sharma

Erik William Young

Paul Alexander

Joseph Flemish

Kostadin Dimitrov Djordjev

Oleg Borisovich Shchekin

Russell Dean Dupuis

Chao-Kun Lin

Chaokun Lin

Ying-Ian Chang

Jurg Schmizberger

Yin-Lan Chang

Jae Hyun Ryou

Min Soo Noh

Jurg Schmitzberger

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

Monolithic segmented LED array architecture with islanded epitaxial growth

A device may include a substrate having a first embedded transistor in a first region and a second embedded transistor in a second region. The first region and the second region may be separated by trench extending through at least a portion of an epitaxial layer formed on the substrate. The first embedded transistor may be connected to a first light emitting diode (LED) and the second embedded transistor may be connected to a second LED. A first optical isolation layer may be between the epitaxial layer and the first region of the substrate. A second optical isolation layer may be between the epitaxial layer and the second region of the substrate.

Segmented LED with embedded transistors

A light-emitting device is disclosed which includes a segmented active layer disposed between a segmented conductivity layer and a continuous conductivity layer, the active layer, the segmented conductivity layer, and the continuous conductivity layer being arranged to define a plurality of pixels, each pixel including a different segment of the segmented conductivity layer and the segmented active layer. A continuous wavelength converting layer disposed on the continuous conductivity layer is provided. A plurality of first contacts, each first contact being electrically connected to a different segment of the segmented conductivity layer is provided. One or more second contacts that are electrically connected to the continuous conductivity layer are also provided, the number of second contacts being less than the number of first contacts.

Monolithic, segmented light emitting diode array

A method of supporting a plurality of planar substrates in a tube shaped furnace for conducting a thermal treatment process is disclosed. The method uses a boat fixture having a base frame including two length portions and a first width portion, a second width portion, and one or more middle members connected between the two length portions. Additionally, the method includes mounting a removable first grooved rod respectively on the first width portion, the second width portion, and each of the one or more middle members, each first grooved rod having a first plurality of grooves characterized by a first spatial configuration. The method further includes inserting one or two substrates of a plurality of planar substrates into each groove in the boat fixture separated by a distance.

Quartz boat method and apparatus for thin film thermal treatment

An apparatus for reactive thermal treatment of thin film photovoltaic devices includes a furnace tube including an inner wall extended from a first end to a second end. The apparatus further includes a gas supply device coupled to the second end and configured to fill one or more working gases into the furnace tube. Additionally, the apparatus includes a cover configured to seal the furnace tube at the first end and serve as a heat sink for the one or more working gases. Furthermore, the apparatus includes a fixture mechanically attached to the cover. The fixture is configured to load an array of substrates into the furnace tube as the cover seals the furnace tube. Moreover, the apparatus includes a crescent shaped baffle member disposed seamlessly at a lower portion of the inner wall for blocking a convection current of the one or more working gases cooled by the cover.

Method and structure for processing thin film PV cells with improved temperature uniformity

In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.

Active region of a light emitting device optimized for increased modulation speed operation

Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.

Deep quantum well electro-absorption modulator

Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.

Method and structure for deep well structures for long wavelength active regions

The method comprises forming barrier layers of AlGaAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.

Electroabsorption modulator

The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

Material systems for semiconductor tunnel-junction structures

The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III&#x2013;V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 &#x3bc;m is deposited over the substrate wafer.

Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region

The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and a p-type spacing layer. The tunnel junction structure comprises a p-type tunnel junction layer adjacent the p-type spacing layer, an n-type tunnel junction layer and a tunnel junction between the p-type tunnel junction layer and the n-type tunnel junction layer. The p-type tunnel junction layer comprises a layer of a p-type first semiconductor material that includes gallium and arsenic. The n-type tunnel junction layer comprises a layer of an n-type second semiconductor material that includes indium, gallium and phosphorus. The high dopant concentration attainable in the second semiconductor material reduces the width of the depletion region at the tunnel junction and increases the electrostatic field across the tunnel junction, so that the reverse bias at which tunneling occurs is reduced.

GaAs-based long-wavelength laser incorporating tunnel junction structure

A laser and method for making the same are disclosed. The laser includes a p-layer, an n-layer, and an active region located between the p-layer and the n-layer. The active region includes a quantum well layer sandwiched between first and second barrier layers. The quantum well layer includes an InP-based material. The first and second barrier layers also include an InP-based material. The barrier layers are homogeneous layers of the InP-based material. The barrier layers are preferably deposited by chemical vapor deposition from precursors that include a surfactant element that inhibits the formation of P&#x2014;P dimers on a surface of the barrier layer during the deposition process. In one embodiment, the surfactant element is chosen from the group consisting of Sb, Si, and Te, and the barrier material includes InGaP or AlInP.

Growing community of inventors

Sunnyvale, CA, United States of America

Ashish Tandon